Semiconductor device

• US 6,445,059 B1
• Filed: 07/28/1999
• Issued: 09/03/2002
• Est. Priority Date: 12/14/1995
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US09/362,810
• Time in Patent Office: 1,133 Days
• Field of Search: 257/642, 257/643, 257/639, 257/640, 257/347, 257/66, 257/72
• US Class Current: 257/642
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78636 with supplementary region or layer for improving the flatness of the device

Abstract

A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.

Claims

1. A semiconductor device comprising:

a substrate;

a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

a first insulating film comprising silicon nitride formed over said switching element;

a second insulating film comprising silicon oxynitride formed on said first insulating film; and

an organic resin film formed on said second insulating film;

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

2. The semiconductor device according to claim 1 wherein said semiconductor device is a liquid crystal display device.

3. The semiconductor device according to claim 1 wherein said semiconductor device is an EL display device.

4. The semiconductor device according to claim 1 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

5. The semiconductor device according to claim 1 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

6. The semiconductor device according to claim 1 wherein a dielectric constant of said organic resin film is not larger than 3.

7. A semiconductor device comprising:

a substrate;

a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

a first insulating film comprising silicon oxide formed over said switching element;

a second insulating film comprising silicon nitride formed on said first insulating film;

an organic resin film formed on said second insulating film;

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

8. The semiconductor device according to claim 7 wherein said semiconductor device is a liquid crystal display device.

9. The semiconductor device according to claim 7 wherein said semiconductor device is an EL display device.

10. The semiconductor device according to claim 7 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

11. The semiconductor device according to claim 7 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

12. The semiconductor device according to claim 7 wherein a dielectric constant of said organic resin film is not larger than 3.

13. A semiconductor device comprising:

a substrate;

a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

a first insulating film comprising silicon oxide formed over said switching element;

a second insulating film comprising silicon oxynitride formed on said first insulating film; and

an organic resin film formed on said second insulating film;

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

14. The semiconductor device according to claim 13 wherein said semiconductor device is a liquid crystal display device.

15. The semiconductor device according to claim 13 wherein said semiconductor device is an EL display device.

16. The semiconductor device according to claim 13 wherein said thin film transistor-has at least one lightly doped region formed between said channel region and said pair of impurity regions.

17. The semiconductor device according to claim 13 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

18. The semiconductor device according to claim 13 wherein a dielectric constant of said organic resin film is not larger than 3.

19. A semiconductor device comprising:

a substrate;

a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

a first interlayer insulating film formed over said switching element;

a source line formed on said first interlayer insulating film and electrically connected to said switching element;

a second interlayer insulating film comprising silicon nitride formed over said source line;

an organic resin film formed on said second interlayer insulating film;

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

20. The semiconductor device according to claim 19 wherein said first interlayer insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and a laminate thereof.

21. The semiconductor device according to claim 19 wherein said semiconductor device is a liquid crystal display device.

22. The semiconductor device according to claim 19 wherein said semiconductor device is an EL display device.

23. The semiconductor device according to claim 19 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

24. The semiconductor device according to claim 19 wherein said organic r e sin film comprises a material s elected from the group consisting of polyamide and acrylic resins.

25. The semiconductor device according to claim 19 wherein a dielectric constant of said organic resin film is not larger than 3.

26. The semiconductor device according to claim 19 further comprising another interlayer insulating film comprising silicon oxide formed between said second interlayer insulating film and said organic resin film.

27. A semiconductor device comprising:

a substrate;

a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

a first interlayer insulating film formed over said switching element;

a source live formed on said first interlayer insulating film and electrically connected to said switching element;

a second interlayer insulating film comprising silicon oxynitride formed over said source line;

an organic resin film formed on said second interlayer insulating film;

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

28. The semiconductor device according to claim 27 wherein said first interlayer insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and a laminate thereof.

29. The semiconductor device according to claim 27 wherein said semiconductor device is a liquid crystal display device.

30. The semiconductor device according to claim 27 wherein said semiconductor device is an EL display device.

31. The semiconductor device according to claim 27 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

32. The semiconductor device according to claim 27 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

33. The semiconductor device according to claim 27 wherein a dielectric constant of said organic resin film is not larger than 3.

34. A semiconductor device comprising:

a substrate;

an underlying film comprising silicon oxynitride formed over said substrate;

a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

an first insulating film comprising silicon nitride formed over said switching element, and

a second insulating film comprising silicon oxide formed on said first insulating film;

an organic resin film formed on said second insulating film; and

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

35. The semiconductor device according to claim 34 wherein said semiconductor device is a liquid crystal display device.

36. The semiconductor device according to claim 34 wherein said semiconductor device is an EL display device.

37. The semiconductor device according to claim 34 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

38. The semiconductor device according to claim 34 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

39. The semiconductor device according to claim 34 wherein a dielectric constant of said organic resin film is not larger than 3.

40. A semiconductor device comprising:

a substrate;

an underlying film comprising silicon oxynitride formed over said substrate;

a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising;

a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

a gate insulating film formed on said semiconductor island; and

a gate electrode formed over said channel region with said gate insulating film interposed therebetween,

an first insulating film comprising silicon oxynitride formed over said switching element; and

a second insulating film comprising silicon oxide formed on said first insulating film;

an organic resin film formed on said second insulating film; and

a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

41. The semiconductor device according to claim 40 wherein said semiconductor device is a liquid crystal display device.

42. The semiconductor device according to claim 40 wherein said semiconductor device is an EL display device.

43. The semiconductor device according to claim 40 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.

44. The semiconductor device according to claim 40 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

45. The semiconductor device according to claim 40 wherein a dielectric constant of said organic resin film is not larger than 3.

46. A semiconductor device comprising:

at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;

a gate insulating film formed on said first and second semiconductor islands;

first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;

a first insulating film comprising silicon nitride formed over said first and second gate electrodes;

a second insulating film comprising silicon oxynitride formed on said first insulating film;

an organic resin film formed over said second insulating film;

at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.

47. The semiconductor device according to claim 46 wherein said semiconductor device is a driving circuit of a liquid crystal display device.

48. The semiconductor device according to claim 46 wherein said semiconductor device is a driving circuit of an EL display device.

49. The semiconductor device according to claim 46 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

50. The semiconductor device according to claim 46 wherein a dielectric constant of said organic resin film is not larger than 3.

52. The semiconductor device according to claim 50 wherein said semiconductor device is a driving circuit of a liquid crystal display device.

53. The semiconductor device according to claim 50 wherein said semiconductor device is a driving circuit of an EL display device.

54. The semiconductor device according to claim 50 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

55. The semiconductor device according to claim 50 wherein a dielectric constant of said organic resin film is not larger than 3.

51. A semiconductor device comprising:

at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;

a gate insulating film formed on said first and second semiconductor islands;

first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;

a first insulating film comprising silicon nitride formed over said first and second gate electrodes;

a second insulating film comprising silicon oxide formed on said first insulating film;

an organic resin film formed over said second insulating film;

at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.

56. A semiconductor device comprising:

at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;

a gate insulating film formed on said first and second semiconductor islands;

first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;

a first insulating film comprising silicon oxide formed over said first and second gate electrodes;

a second insulating film comprising silicon oxynitride formed on said first insulating film;

an organic resin film formed over said second insulating film;

at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.

57. The semiconductor device according to claim 56 wherein said semiconductor device is a driving circuit of a liquid crystal display device.

58. The semiconductor device according to claim 56 wherein said semiconductor device is a driving circuit of an EL display device.

59. The semiconductor device according to claim 56 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.

60. The semiconductor device according to claim 56 wherein a dielectric constant of said organic resin film is not larger than 3.