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Semiconductor device

  • US 6,445,059 B1
  • Filed: 07/28/1999
  • Issued: 09/03/2002
  • Est. Priority Date: 12/14/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;

    a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;

    a gate insulating film formed on said semiconductor island; and

    a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element;

    a second insulating film comprising silicon oxynitride formed on said first insulating film; and

    an organic resin film formed on said second insulating film;

    a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.

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