Semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element;
a second insulating film comprising silicon oxynitride formed on said first insulating film; and
an organic resin film formed on said second insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
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Abstract
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
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Citations
60 Claims
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1. A semiconductor device comprising:
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a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element;
a second insulating film comprising silicon oxynitride formed on said first insulating film; and
an organic resin film formed on said second insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element;
a second insulating film comprising silicon nitride formed on said first insulating film;
an organic resin film formed on said second insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element;
a second insulating film comprising silicon oxynitride formed on said first insulating film; and
an organic resin film formed on said second insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element;
a source line formed on said first interlayer insulating film and electrically connected to said switching element;
a second interlayer insulating film comprising silicon nitride formed over said source line;
an organic resin film formed on said second interlayer insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A semiconductor device comprising:
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a substrate;
a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element;
a source live formed on said first interlayer insulating film and electrically connected to said switching element;
a second interlayer insulating film comprising silicon oxynitride formed over said source line;
an organic resin film formed on said second interlayer insulating film;
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A semiconductor device comprising:
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a substrate;
an underlying film comprising silicon oxynitride formed over said substrate;
a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon nitride formed over said switching element, and a second insulating film comprising silicon oxide formed on said first insulating film;
an organic resin film formed on said second insulating film; and
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (35, 36, 37, 38, 39)
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40. A semiconductor device comprising:
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a substrate;
an underlying film comprising silicon oxynitride formed over said substrate;
a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising;
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween;
a gate insulating film formed on said semiconductor island; and
a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon oxynitride formed over said switching element; and
a second insulating film comprising silicon oxide formed on said first insulating film;
an organic resin film formed on said second insulating film; and
a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions. - View Dependent Claims (41, 42, 43, 44, 45)
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46. A semiconductor device comprising:
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at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;
a gate insulating film formed on said first and second semiconductor islands;
first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;
a first insulating film comprising silicon nitride formed over said first and second gate electrodes;
a second insulating film comprising silicon oxynitride formed on said first insulating film;
an organic resin film formed over said second insulating film;
at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively. - View Dependent Claims (47, 48, 49, 50, 52, 53, 54, 55)
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51. A semiconductor device comprising:
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at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;
a gate insulating film formed on said first and second semiconductor islands;
first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;
a first insulating film comprising silicon nitride formed over said first and second gate electrodes;
a second insulating film comprising silicon oxide formed on said first insulating film;
an organic resin film formed over said second insulating film;
at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
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56. A semiconductor device comprising:
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at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein;
a gate insulating film formed on said first and second semiconductor islands;
first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween;
a first insulating film comprising silicon oxide formed over said first and second gate electrodes;
a second insulating film comprising silicon oxynitride formed on said first insulating film;
an organic resin film formed over said second insulating film;
at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively. - View Dependent Claims (57, 58, 59, 60)
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Specification