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Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same

  • US 6,445,127 B1
  • Filed: 02/16/1999
  • Issued: 09/03/2002
  • Est. Priority Date: 02/17/1998
  • Status: Expired due to Term
First Claim
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1. A gallium-nitride-group compound-semiconductor light-emitting device comprising:

  • an n-type layer of gallium-nitride-group compound-semiconductor;

    a p-type layer of gallium-nitride-group compound-semiconductor; and

    a light-emitting layer of gallium-nitride-group compound-semiconductor disposed between said n-type layer and said p-type layer;

    said light-emitting layer doped with a p-type impurity such that the concentration of the p-type impurity gradually decreases as the distance from the p-type layer increases, said light-emitting layer having the highest concentration of said p-type impurity in this portion of said light-emitting layer adjacent said p-type layer, said light-emitting layer having the lowest concentration of said p-type impurity in the portion of said light-emitting layer adjacent said n-type layer.

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