Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same
First Claim
1. A gallium-nitride-group compound-semiconductor light-emitting device comprising:
- an n-type layer of gallium-nitride-group compound-semiconductor;
a p-type layer of gallium-nitride-group compound-semiconductor; and
a light-emitting layer of gallium-nitride-group compound-semiconductor disposed between said n-type layer and said p-type layer;
said light-emitting layer doped with a p-type impurity such that the concentration of the p-type impurity gradually decreases as the distance from the p-type layer increases, said light-emitting layer having the highest concentration of said p-type impurity in this portion of said light-emitting layer adjacent said p-type layer, said light-emitting layer having the lowest concentration of said p-type impurity in the portion of said light-emitting layer adjacent said n-type layer.
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Accused Products
Abstract
A gallium-nitride-group compound-semiconductor light-emitting device having an improved luminous intensity that makes it more suitable for use in the full-color outdoor display of an advanced performance. A gallium-nitride-group compound-semiconductor light-emitting device comprising an n-type layer 3, a light-emitting layer 4 and p-type layers 5, 6, the light-emitting layer 4 is doped with a p-type impurity, Mg for example, in a certain specific concentration, so a pn junction is formed within the light-emitting layer 4 and a light emission caused by the electron transition between conduction band and valence band is obtained. In a GaN group compound-semiconductor light-emitting device comprising at least an n-type clad layer 3, a p-type clad layer 5 and a light-emitting layer formed in between the clad layers 3, 5, stacked on a substrate 1. The light-emitting layer 4 is structured as a substance of stacked layers including an n-type layer 41 and a p-type layer 42, or these layers plus an i-type layer formed in between the layers 41 and 42, so a pn junction is formed within the light-emitting layer 4 itself. The injection of electrons and holes into the light-emitting layer 4 is expedited and the luminous intensity of the light-emitting layer 4 is increased.
22 Citations
10 Claims
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1. A gallium-nitride-group compound-semiconductor light-emitting device comprising:
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an n-type layer of gallium-nitride-group compound-semiconductor;
a p-type layer of gallium-nitride-group compound-semiconductor; and
a light-emitting layer of gallium-nitride-group compound-semiconductor disposed between said n-type layer and said p-type layer;
said light-emitting layer doped with a p-type impurity such that the concentration of the p-type impurity gradually decreases as the distance from the p-type layer increases, said light-emitting layer having the highest concentration of said p-type impurity in this portion of said light-emitting layer adjacent said p-type layer, said light-emitting layer having the lowest concentration of said p-type impurity in the portion of said light-emitting layer adjacent said n-type layer. - View Dependent Claims (2, 3, 4, 5, 6, 8, 10)
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7. A gallium-nitride-group compound-semiconductor light-emitting device comprising:
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an n-type clad layer of gallium-nitride-group compound-semiconductor;
a p-type clad layer of gallium-nitride-group compound-semiconductor; and
a light-emitting layer of gallium-nitride-group compound-semiconductor disposed between said n-type clad layer and said p-type clad layer, said light-emitting layer comprising an n-type layer and a p-type layer, said n-type layer disposed so as to contact said n-type cladding layer, said p-type layer disposed so as to contact said p-type clad layer.
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9. A gallium-nitride-group compound-semiconductor light-emitting device comprising:
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an n-type clad layer of gallium-nitride-group compound-semiconductor;
a p-type clad layer of gallium-nitride-group compound-semiconductor; and
a light-emitting layer of gallium-nitride-group compound-semiconductor disposed between said n-type clad layer and said p-type clad layer, said light-emitting layer comprising an n-type layer, an i-type layer and a p-type layer, said n-type layer disposed so as to contact said n-type cladding layer, said p-type layer disposed so as to contact said p-type clad layer, said i-type layer disposed between said n-type layer and said p-type layer.
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Specification