Thin film transistor for a liquid crystal display device and a fabrication process thereof
First Claim
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1. A method of fabricating a thin-film transistor, comprising the steps of:
- forming a gate electrode on a substrate;
forming a gate insulation film on said substrate so as to cover said gate electrode;
forming a semiconductor film on said gate insulation film;
forming an electrode layer on said semiconductor film by depositing a first conductor layer containing a refractory metal element and a second conductor layer containing Al consecutively;
applying a dry etching process to said electrode layer to form a first ohmic electrode parttern located at a first side of said gate electrode and a second ohmic electrode pattern located at a second, opposite side of said gate electrode;
covering said first and second ohmic electrode patterns by a protective insulation film such that said protective insulation film contacts each of said first and second ohmic electrode patterns intimately;
forming a contact hole in said protective insulation film so as to expose said second conductor layer at said contact hole; and
forming a pixel electrode on said protective insulation film to as to achieve an electrical contact with said second ohmic electrode pattern at said contact hole.
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Abstract
A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al and defined by a second lateral edge, wherein the second lateral edge is receded with respect to the first lateral edge when viewed in a direction perpendicular to a substrate on which the thin-film transistor is formed.
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Citations
9 Claims
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1. A method of fabricating a thin-film transistor, comprising the steps of:
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forming a gate electrode on a substrate;
forming a gate insulation film on said substrate so as to cover said gate electrode;
forming a semiconductor film on said gate insulation film;
forming an electrode layer on said semiconductor film by depositing a first conductor layer containing a refractory metal element and a second conductor layer containing Al consecutively;
applying a dry etching process to said electrode layer to form a first ohmic electrode parttern located at a first side of said gate electrode and a second ohmic electrode pattern located at a second, opposite side of said gate electrode;
covering said first and second ohmic electrode patterns by a protective insulation film such that said protective insulation film contacts each of said first and second ohmic electrode patterns intimately;
forming a contact hole in said protective insulation film so as to expose said second conductor layer at said contact hole; and
forming a pixel electrode on said protective insulation film to as to achieve an electrical contact with said second ohmic electrode pattern at said contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a liquid crystal display device comprising:
- a first substrate;
a second substrate facing said first substrate;
a liquid crystal layer confined between said first substrate and said second substrate;
a thin-film transistor provided on said first substrate;
a protective insulation film covering said thin-film transistor; and
a pixel electrode provided on said protective insulation film in electrical connection with said thin-film transistor, said method comprising the steps of;forming said gate electrode on said first substrate;
forming a gate insulation film on said first substrate so as to cover said gate electrode;
forming said semiconductor film on said gate insulation film;
forming an electrode layer on said semiconductor film by depositing a first conductor layer containing a refractory metal element and a second conductor layer containing Al consecutively;
applying a dry etching process to said electrode layer to form a first ohmic electrode pattern located at a first side of said gate electrode and a second ohmic electrode pattern located at a second, opposite side of said gate electrode;
covering said first and second ohmic electrode patterns by said protective insulation film such that said protective insulation film contacts each of said first and second ohmic electrode patterns intimately;
forming a contact hole in said protective insulation film so as to expose said second conductor layer at said contact hole; and
forming said pixel electrode on said protective insulation film to as to achieve an electrical contact with said second ohmic electrode pattern at said contact hole.
- a first substrate;
Specification