Laser detection of material thickness

• US 6,445,457 B1
• Filed: 08/23/1999
• Issued: 09/03/2002
• Est. Priority Date: 04/22/1997
• Status: Expired due to Fees

• Current Assignee: Los Alamos National Security LLC (Government of the United States of America)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Early, James W.
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Nguyen, Tu T
• Application Number:
  US09/379,889
• Time in Patent Office: 1,107 Days
• Field of Search: 356/357, 356/448, 356/73, 356/655, 356/630, 356/631, 356/632, 340/905, 340/582, 340/583
• US Class Current: 356/630
• CPC Class Codes: G01B 11/0666 using an exciting beam and a detection beam including surface acoustic waves [SAW]
• CPC Class Codes: G01B 17/02 for measuring thickness

Abstract

There is provided a method for measuring material thickness comprising: (a) contacting a surface of a material to be measured with a high intensity short duration laser pulse at a light wavelength which heats the area of contact with the material, thereby creating an acoustical pulse within the material: (b) timing the intervals between deflections in the contacted surface caused by the reverberation of acoustical pulses between the contacted surface and the opposite surface of the material: and (c) determining the thickness of the material by calculating the proportion of the thickness of the material to the measured time intervals between deflections of the contacted surface.

Claims

1. A method for measuring a material layer thickness comprising:

(a) contacting a surface of a material with a first laser pulse at a light wavelength that heats the surface of the material to generate an acoustical pulse that reverberates within the material to periodically displace the surface;

(b) directing a second laser pulse having a pulse length greater than the pulse length of the first laser pulse onto the surface of the material that is heated by the first laser pulse at an oblique angle effective to reflect from the surface;

(c) placing a detector at a location effective to detect reflections of the second laser pulse from the surface;

(d) detecting angular variations in the reflections of the second laser pulse as the surface is displaced;

(e) determining the frequency of the angular variations wherein the material thickness is inversely related to the frequency.

2. The method of claim 1 wherein the first laser pulse has a pulse width less than the time of travel of the acoustical pulse through the thickness of the material.

3. The method of claim 1 wherein the second laser pulse has a pulse width greater than the time of travel of the acoustical pulse through the thickness of the material.

4. The method of claim 1 wherein the detector is selected from the group of detectors consisting of photodetectors, photomultipliers, and photodiodes.

5. Apparatus for measuring a material layer thickness comprising:

(a) a first laser for directing a first pulse of light onto a surface of the material layer at a wavelength effective to heat the surface to generate an acoustical pulse that reverberates within the material layer to periodically displace the surface;

(b) a second laser for directing a second pulse of light onto the surface of the material at an oblique angle effective to reflect from the surface, the second pulse having a duration greater than the first pulse;

(c) a detector arranged to detect angular variations in the second pulse of light reflected from the material as the surface is displaced;

(d) means for determining the frequency of the angular variations where the material layer thickness is inversely related to the frequency.

6. The apparatus of claim 5 wherein the first pulse of light has a duration less than the time of travel of the acoustic pulse through the material layer.

7. The apparatus of claim 5 wherein the second pulse of light has a duration greater than twice the time of travel of the acoustic pulse through the material layer.

8. The apparatus of claim 5 wherein the detector is selected from the group consisting of photodetectors, photomultipliers, and photodiodes.