Capacitive moisture sensor and fabrication method for capacitive moisture sensor

• US 6,445,565 B1
• Filed: 01/14/2002
• Issued: 09/03/2002
• Est. Priority Date: 02/15/2001
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Toyoda, Inao, Matsuhashi, Hajime
• Primary Examiner(s): Dinkins, Anthony
• Application Number:
  US10/043,106
• Publication Number:
  US 20020109959A1
• Time in Patent Office: 232 Days
• Field of Search: 361/306.3, 361/313, 361/329, 361/303, 361/311, 257/301, 257/307, 257/308, 257/309
• US Class Current: 361/303
• CPC Class Codes: G01N 27/225 by using hygroscopic materials

Abstract

A capacitive moisture sensor is made from an SOI, i.e., silicon-on-insulator, substrate. Two electrodes, between which moisture-sensitive material is interposed, are formed from a thick silicon layer of the SOI substrate by separating the layer with a trench vertically reaching an insulator layer of the SOI substrate. Two substantially vertical sidewalls defining the trench make up a capacitor for moisture sensing. Therefore, by using deep trench, i.e., thick silicon layer, capacitance sensitivity to moisture is readily increased without horizontally widening the electrode or using horizontal surface of the electrode, that is, without enlarging sensor size or complicating fabrication process. In addition, the electrodes are made of silicon, so that corrosion resistivity against moisture is significantly.

Claims

1. A capacitive moisture sensor comprising:

a first semiconductor layer;

a second semiconductor layer;

an insulator film interposed between the first and the second semiconductor layers; and

a moisture-sensitive material whose dielectric constant varies in response to moisture, wherein;

a trench vertically reaching the insulator film is formed in the first semiconductor layer;

the first semiconductor layer is separated into at least two isolated regions by the trench; and

the moisture-sensitive material is packed in the trench.

2. The capacitive moisture sensor as in claim 1, wherein:

the first and the second semiconductor layers are made of silicon.

3. The capacitive moisture sensor as in claim 1, wherein:

the moisture-sensitive material is a hygroscopic organic polymer.

4. The as capacitive moisture sensor in claim 1, wherein:

the isolated regions are a frame part located in a periphery of the first semiconductor layer, and a pair of electrode parts located inside the frame part to produce a sensor output signal based on capacitance between the two electrode parts; and

a width between the two electrode parts is narrower than a width between the electrode parts and the frame part.

5. The capacitive moisture sensor as in claim 1, further comprising:

another insulator film formed on a surface of each isolated region.

6. The capacitive moisture sensor as in claim 5, wherein:

the another insulator film is made of silicon oxide.

7. The capacitive moisture sensor as in claim 5, wherein:

the another insulator film is thinner than the insulator film interposed between the first and the second semiconductor layers.

8. A fabrication method for the capacitive moisture sensor as in claim 1, wherein:

the trench is formed by anisotropic etching.

9. The fabrication method as in claim 8, wherein:

the moisture-sensitive material is packed in the trench in collaboration with bubble removal under low pressure atmosphere after the moisture-sensitive material is coated over the trench.

10. The capacitive moisture sensor as in claim 1, wherein:

the first and second semiconductor layers are made of single crystal silicon.

11. The capacitive moisture sensor as in claim 1, wherein:

a side wall of each insulated region is substantially perpendicular to a horizontal surface of the isolated region.

12. The capacitive moisture sensor as in claim 4, wherein:

a vertical width of each electrode part is larger than a horizontally minimum width of the electrode part.

13. A fabrication method for a capacitive moisture sensor, the method comprising steps of:

forming a thick semiconductor layer having a predetermined thickness on an insulator layer;

forming a trench having a predetermined width, vertically reaching the insulator layer, and separating the semiconductor layer into at least two isolated regions including a pair of electrode parts to produce a sensor output signal based on capacitance between the electrode parts; and

packing the trench with a moisture-sensitive material whose dielectric constant varies in response to moisture.

14. The fabrication method as in claim 13, wherein:

the semiconductor layer is made of silicon; and

the moisture-sensitive material is a hygroscopic organic polymer.

15. The fabrication method as in claim 13, wherein:

the isolated regions further includes a frame part located in a periphery of the semiconductor layer, inside which the electrode parts are located; and

a width between the electrode parts is narrower than a width between the electrode part and the frame parts.

16. The fabrication method as in claim 13, further comprising a step of:

forming another insulator film of silicon oxide on a surface of each isolated region.

17. The fabrication method as in claim 13, wherein:

the trench is formed by anisotropic etching.

18. The fabrication method as in claim 13, wherein:

the moisture-sensitive material is packed in the trench in collaboration with bubble removal under low pressure atmosphere after the moisture-sensitive material is coated over the trench.

19. The fabrication method as in claim 13, wherein:

a side wall of each isolated region is substantially perpendicular to a horizontal surface of the isolated region.

20. The fabrication method as in claim 13, wherein:

a vertical width of each electrode part is larger than a horizontally minimum width of the electrode part.