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Detection of undesired connection between conductive structures within multiple layers on a semiconductor wafer

  • US 6,448,098 B1
  • Filed: 02/01/2000
  • Issued: 09/10/2002
  • Est. Priority Date: 07/14/1999
  • Status: Expired due to Fees
First Claim
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1. A method for detecting undesired connection between conductive structures within multiple layers on a semiconductor wafer during fabrication of an integrated circuit on said semiconductor wafer, said method including steps of:

  • A. fabricating a first conductive structure within a first layer on said semiconductor wafer, and forming said first conductive structure to have a comb structure with a plurality of teeth;

    B. fabricating a second conductive structure within a second layer on said semiconductor wafer, and forming said second conductive structure to surround three sides of each of said plurality of teeth of said comb structure of said first conductive structure;

    C. fabricating an interlevel of an insulating material disposed between said first layer and said second layer for separating said first layer from said second layer;

    wherein said first layer, said second layer, and said interlevel of insulating material are comprised of three separate levels of insulating material with said first conductive structure being formed within a first level of insulating material, said second conductive structure being formed within a second level of insulating material, and said interlevel of insulating material being disposed between said first and second levels of insulating material;

    D. fabricating a plurality of contact structures of conductive material formed within said interlevel of said insulating material, and forming each of said plurality of contact structures to be connected to a respective one of said plurality of teeth of said first conductive structure; and

    E. detecting when any of said plurality of contact structures is undesirably connected to any portion of said second conductive structure when said first conductive structure is misaligned with respect to said second conductive structure in any of a plurality of dimensions.

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