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Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners

  • US 6,448,153 B2
  • Filed: 12/28/2000
  • Issued: 09/10/2002
  • Est. Priority Date: 10/29/1996
  • Status: Expired due to Term
First Claim
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1. A method for obtaining one or more chips from a semiconductor wafer, the method comprising:

  • forming one or more openings in a first side of the semiconductor wafer along a boundary of the one or more chips, wherein the one or more openings do not go through the wafer; and

    placing the wafer into a non-contact wafer holder and thinning the wafer with a dry etch to remove material from an entire second side of the wafer at least until the one or more openings become exposed on the second side, wherein the dry etch rounds one or more of the edges and/or coners obtained on the second side of the wafer at a location of the one or more openings when the one or more openings become exposed.

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