Method of improving moisture resistance of low dielectric constant films
First Claim
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1. A method for processing a substrate, comprising;
- depositing a first material;
depositing a low dielectric constant material contacting the first material, wherein the low dielectric constant material is a constant material is a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate;
exposing the low dielectric constant material to water or a hydrophobic-imparting surfactant; and
curing the low dielectric constant material; and
then depositing a seecond material contacting the low dielectric constant material.
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Abstract
A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
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Citations
30 Claims
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1. A method for processing a substrate, comprising;
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depositing a first material;
depositing a low dielectric constant material contacting the first material, wherein the low dielectric constant material is a constant material is a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate;
exposing the low dielectric constant material to water or a hydrophobic-imparting surfactant; and
curing the low dielectric constant material; and
thendepositing a seecond material contacting the low dielectric constant material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 22)
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16. A method for processing a substrate, comprising:
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depositing a first material;
depositing a silicon oxide based on material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate by reacting one or more silicon compounds that contain carbon with an oxidizing gas at an RF plasma condicitions;
exposing the silicon oxide-based material to water at a temperature from about 50°
C. to about 100°
C., or to a hydrophobic-imparting surfactant at a temperature from about 10°
C. to about 100°
C.;
curing the silicon oxide based material at a temperature from about 100°
to about 400°
C.; and
depositing a second material on the silicon oxide based material. - View Dependent Claims (17, 18, 19, 20, 21, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification