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Method of improving moisture resistance of low dielectric constant films

  • US 6,448,187 B2
  • Filed: 02/21/2001
  • Issued: 09/10/2002
  • Est. Priority Date: 11/04/1998
  • Status: Expired due to Fees
First Claim
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1. A method for processing a substrate, comprising;

  • depositing a first material;

    depositing a low dielectric constant material contacting the first material, wherein the low dielectric constant material is a constant material is a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate;

    exposing the low dielectric constant material to water or a hydrophobic-imparting surfactant; and

    curing the low dielectric constant material; and

    then depositing a seecond material contacting the low dielectric constant material.

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