Optical semiconductor module, its manufacture, reflection film, its manufacture, and laser and optical devices using reflection film

• US 6,448,583 B1
• Filed: 09/08/1999
• Issued: 09/10/2002
• Est. Priority Date: 09/08/1998
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited, Fujitsu Quantum Devices Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited, Fujitsu Quantum Devices Limited (Fujitsu Limited)
• Inventors: Yoneda, Yoshihiro, Fukushima, Akira, Soda, Haruhisa, Shoji, Hajime
• Primary Examiner(s): Ho, Hoai V.
• Assistant Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US09/392,239
• Time in Patent Office: 1,098 Days
• Field of Search: 257/80, 257/81, 257/98, 257/99, 257/432, 257/433, 385/49, 372/96
• US Class Current: 257/81
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: G02B 6/4212 the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
• CPC Class Codes: G02B 6/4245 Mounting of the opto-electronic elements
• CPC Class Codes: G02B 6/4248 Feed-through connections for the hermetical passage of fibres through a package wall see provisionally also G02B6/4428
• CPC Class Codes: G02B 6/4253 by embedding housing components in an adhesive or a polymer material G02B6/4212 takes precedence
• CPC Class Codes: G02B 6/4255 Moulded or casted packages
• CPC Class Codes: G02B 6/4259 of the transparent type
• CPC Class Codes: G02B 6/4266 Thermal aspects, temperature control or temperature monitoring thermal aspect of electrical circuits H05K7/20, H05K5/0213, temperature control in general G05D23/19
• CPC Class Codes: G02B 6/4267 Reduction of thermal stress, e.g. by selecting thermal coefficient of materials
• CPC Class Codes: G02B 6/4277 Protection against electromagnetic interference [EMI], e.g. shielding means shielding of electric apparatus H05K9/00, of instruments G12B17/00
• CPC Class Codes: G02B 6/4286 Optical modules with optical power monitoring
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/16195 Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01S 5/0021 Degradation or life time measurements
• CPC Class Codes: H01S 5/02234 Resin-filled housings; the housings being made of resin
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02325 Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0287 Facet reflectivity
• CPC Class Codes: H01S 5/0683 : by monitoring the optical output parameters

Abstract

An optical semiconductor element and an optical element having an optical coupling facet are disposed on a support surface of a platform. The optical element is optically coupled to the optical semiconductor element at the optical coupling facet. A protective member covers the optical semiconductor element and is disposed at least in a light transmission area in a space between the semiconductor element and the optical coupling facet of the optical element. The protective member is made of gel acrylic modification resin. An optical semiconductor module having a sufficient moisture resistance and being suitable for low cost is provided.

Claims

1. An optical semiconductor module comprising:

a platform having a support surface;

an optical semiconductor element disposed on the support surface of said platform;

an optical element disposed on the support surface of said platform and having an optical coupling facet, said optical element being optically coupled to said optical semiconductor element at the optical coupling facet; and

a protective member made of gel acrylic modification resin, covering said optical semiconductor element, and being disposed at least in a light transmission area in a space between said semiconductor element and the optical coupling facet of said optical element.

2. An optical semiconductor module according to claim 1, wherein said protective member is made of ultraviolet curing type resin.

3. An optical semiconductor module according to claim 1, wherein said optical element is an optical fiber.

4. An optical semiconductor module according to claim 3, further comprising:

an outer frame having an opening, said platform being accommodated in said outer frame, and the optical fiber being extending out of said outer frame by being passed through a wall of said outer frame; and

a first adhesive layer for adhering said platform to said outer frame,

wherein said first adhesive layer is made of ultraviolet curing type resin.

5. An optical semiconductor module according to claim 4, further comprising a second adhesive layer made of ultraviolet curing type resin for adhering the optical fiber to the wall of said outer frame through which the optical fiber passes.

6. An optical semiconductor module according to claim 5, wherein said platform and said outer frame are transparent to ultraviolet rays for curing the ultraviolet curing type resin contained in said protective member and said first and second adhesive layers.

7. An optical semiconductor module according to claim 4, further comprising:

a lid for closing the opening of said outer frame; and

a third adhesive layer made of ultraviolet curing type resin for adhering said lid to said outer frame.

8. An optical semiconductor module according to claim 7, wherein said lid is transparent to ultraviolet rays.

9. An optical semiconductor module according to claim 4, wherein said protective member is filled in said outer frame.

10. An optical semiconductor module comprising:

a platform having a support surface;

an optical semiconductor element disposed on the support surface of said platform;

an optical element disposed on the support surface of said platform and having an optical coupling facet, said optical element being optically coupled to said optical semiconductor element at the optical coupling facet;

a protective member made of insulating resin covering said optical semiconductor element, and being disposed at least in a light transmission area in a space between said semiconductor element and the optical coupling facet of said optical element; and

a shielding member made of conductive resin and covering a surface of said protective member.

11. An optical semiconductor module according to claim 10, wherein said shielding member is made of base resin having a same composition as the insulating resin of said protecting member and mixed with conductive material.

12. An optical semiconductor module according to claim 10, wherein said optical semiconductor element is a photoelectric conversion element for converting an optical signal into an electric signal, the optical semiconductor module further comprises an electronic element for amplifying the electric signal output from said optical semiconductor element, said electronic element being disposed on said platform, and said protective member covering said electronic element.

13. A laser device comprising:

a laser medium having an oscillation wavelength λ and

two reflection facets and defining an optical resonator;

a lamination structure formed on at least one reflection facet of the optical resonator defined by said laser medium, said lamination structure being formed by laminating k (k is a positive integer) pairs of a first layer having a refractive index n₁ and a second layer having a refractive index n₂ wherein a thickness of the first layer is;

14. An optical device comprising:

an optical medium having a refractive index n₀ and a defined reflection facet;

a lamination structure formed on the reflection facet of said optical medium, said lamination structure being formed by laminating k (k is a positive integer) pairs of a first layer having a refractive index n₁ and a second layer having a refractive index n₂ wherein optical thicknesses of the first layer and the second layer-relative to light having a wavelength λ

are both;

15. An optical device comprising:

an optical medium having a refractive index n₀ and a defined reflection facet;

a lamination structure formed on the reflection facet of said optical medium, said lamination structure being formed by laminating k (k is a positive integer) pairs of a first layer having a refractive index n₁ and a second layer having a refractive index n₂ wherein optical thicknesses of the first layer and the second layer relative to light having a wavelength λ

are both;

16. A laser device comprising:

a laser medium having an oscillation wavelength λ

[nm], an effective refractive index n₀ and two reflection facets defining an optical resonator;

a first layer formed on at least one reflection facet of said laser medium, made of silicon oxide and having a thickness d₁ [nm];

a second layer formed on a surface of said first layer, made of silicon having a refractive index n_si and having a thickness d₂ [nm];

a third layer formed on a surface of said second layer, made of silicon oxide having a thickness d₃ [nm];

wherein the effective refractive index n₀ is in a range from 3.18 to 3.28, the thickness d₁ is in a range of;

17. A laser device comprising:

a laser medium having an oscillation wavelength λ

[nm], an effective refractive index n₀ and two reflection facets defining an optical resonator;

a first layer formed on at least one reflection facet of said laser medium, made of aluminum oxide and having a thickness d₁ [nm];

a second layer formed on a surface of said first layer, made of silicon having a refractive index n_si and having a thickness d₂ [nm];

a third layer formed on a surface of said second layer, made of aluminum oxide having a thickness d₃ [nm];

wherein the effective refractive index n₀ is in a range from 3.18 to 3.28, the thickness d₁ is in a range of;

18. A laser device comprising:

a laser medium having an oscillation wavelength λ

[nm], an effective refractive index n₀ and two reflection facets defining an optical resonator;

a first layer formed on at least one reflection facet of said laser medium, made of silicon oxide and having a thickness d₁ [nm];

a second layer formed on a surface of said first layer, made of silicon having a refractive index n_si and having a thickness d₂ [nm];

a third layer formed on a surface of said second layer, made of aluminum oxide having a thickness d₃ [nm];

wherein the effective refractive index n₀ is in a range from 3.18 to 3.28, the thickness d₁ is in a range of;

19. A laser device comprising:

a laser medium having an oscillation wavelength λ

[nm], an effective refractive index n₀ and two reflection facets defining an optical resonator;

a first layer formed on at least one reflection facet of said laser medium, made of aluminum oxide and having a thickness d₁ [nm];

a second layer formed on a surface of said first layer, made of silicon having a refractive index n_si and having a thickness d₂ [nm];

a third layer formed on a surface of said second layer, made of silicon oxide having a thickness d₃ [nm];

wherein the effective refractive index n₀ is in a range from 3.18 or larger to 3.28 of smaller, the thickness d₁ is in a range of;