Fringe field switching liquid crystal display and method for manufacturing the same
First Claim
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1. A fringe field switching liquid crystal display comprising:
- a lower substrate;
a plurality of gate bus lines extending along a selected direction on the lower substrate;
a plurality of data bus lines disposed on the lower substrate in a manner such that they are crossed with the plurality of gate bus lines, for defining a unit pixel;
a gate insulating film for insulating the gate bus lines and the data bus lines from each other;
a thin film transistor located at a place where the gate bus lines and the data bus lines are crossed with each other;
a pixel electrode formed directly on the gate insulating film, the pixel electrode in contact with the thin film transistor and disposed in a space of the unit pixel;
a counter electrode overlapped on the pixel electrode and the thin film transistor, the counter electrode cooperating with the pixel electrode for forming a fringe field which actuates all liquid crystal molecules existing on the pixel electrode and the counter electrode; and
a passivation layer intervened between the pixel electrode and the counter electrode, wherein the pixel electrode and the counter electrode are made from a transparent conductive material and the plurality of gate bus lines are made as a metal film including aluminum.
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Abstract
Disclosed is a fringe field switching liquid crystal display (FFS-LCD) and a method for manufacturing the same. The FFS-LCD comprises: a lower substrate; a plurality of gate bus lines extending along a selected direction on the lower substrate; a plurality of data bus lines disposed on the lower substrate in a manner such that they are crossed with the plurality of gate bus lines, for defining a unit pixel; a gate insulating film for insulating the gate bus lines and the data bus lines from each other; a thin film transistor located at a place where the gate bus lines and the data bus lines are crossed with each other; a pixel electrode formed on the gate insulating film, brought into contact with the thin film transistor and disposed in a space of the unit pixel; a counter electrode overlapped on the pixel electrode, the counter electrode cooperating with the pixel electrode for forming a fringe field which actuates all liquid crystal molecules existing on the pixel electrode and the counter electrode; and a passivation layer intervened between the pixel electrode and the counter electrode, wherein the pixel electrode and the counter electrode are made from a transparent conductive material and the plurality of gate bus lines are made as a metal film including aluminum.
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Citations
8 Claims
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1. A fringe field switching liquid crystal display comprising:
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a lower substrate;
a plurality of gate bus lines extending along a selected direction on the lower substrate;
a plurality of data bus lines disposed on the lower substrate in a manner such that they are crossed with the plurality of gate bus lines, for defining a unit pixel;
a gate insulating film for insulating the gate bus lines and the data bus lines from each other;
a thin film transistor located at a place where the gate bus lines and the data bus lines are crossed with each other;
a pixel electrode formed directly on the gate insulating film, the pixel electrode in contact with the thin film transistor and disposed in a space of the unit pixel;
a counter electrode overlapped on the pixel electrode and the thin film transistor, the counter electrode cooperating with the pixel electrode for forming a fringe field which actuates all liquid crystal molecules existing on the pixel electrode and the counter electrode; and
a passivation layer intervened between the pixel electrode and the counter electrode, wherein the pixel electrode and the counter electrode are made from a transparent conductive material and the plurality of gate bus lines are made as a metal film including aluminum. - View Dependent Claims (2, 3)
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4. A fringe field switching liquid crystal display comprising:
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a lower substrate;
a plurality of gate bus lines extending along a selected direction on the lower substrate;
a plurality of data bus lines disposed on the lower substrate in a manner such that they are crossed with the plurality of gate bus lines, for defining a unit pixel;
a gate insulating film for insulating the gate bus lines and the data bus lines from each other;
a thin film transistor located at a place where the gate bus lines and the data bus lines are crossed with each other;
a pixel electrode formed directly on the gate insulating film, brought into contact with the thin film transistor and disposed in a space of the unit pixel;
a counter electrode overlapped on the pixel electrode, the counter electrode cooperating with the pixel electrode for forming a fringe field which actuates all liquid crystal molecules existing on the pixel electrode and the counter electrode; and
a passivation layer intervened between the pixel electrode and the counter electrode, wherein the pixel electrode and the counter electrode are made from a transparent conductive material, and wherein the plurality of gate bus lines are made as a metal film including aluminum. - View Dependent Claims (5, 6)
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7. A method for manufacturing a fringe field switching liquid crystal display, the method comprising the steps of:
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forming a gate bus line and a shielding section on a predetermined region of a lower substrate;
depositing a gate insulating film, an amorphous silicon layer and a doped semiconductor layer on the lower substrate;
patterning selected portions of the doped semiconductor layer and the amorphous silicon layer and thereby forming an ohmic layer and a channel layer;
forming a pixel electrode as a transparent conductive layer on the gate insulating film of one side of the channel layer;
forming a source electrode and a drain electrode at both sides of the channel layer and a data bus line which is orthogonal to the gate bus line;
forming a passivation film on the gate insulating film at a place where the data bus line and the pixel electrode are formed;
etching the passivation film and the gate insulating film in a manner such that a predetermined portion of the gate bus line is exposed; and
forming a counter electrode as a transparent conductive layer, on the passivation film in a manner such that the counter electrode is brought into contact with the exposed portion of the gate bus line, wherein each of the gate bus line and the shielding section are made as a metal film including aluminum. - View Dependent Claims (8)
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Specification
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Current AssigneeBOE HYDIS Technology Company Limited (SK Hynix Inc.)
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Original AssigneeHyundai Display Technology, Inc. (Hon Hai Precision Industry Co., Ltd.)
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InventorsMin, Tae Yup, Yi, Seung Jun, Lee, Seung Hee, Jeong, Youn Hak, Park, In Cheol
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Primary Examiner(s)Sikes, William L.
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Assistant Examiner(s)NGO, HUYEN LE
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Application NumberUS09/599,372Time in Patent Office810 DaysField of Search349/141, 349/143, 349/42, 349/46, 257/72US Class Current349/141CPC Class CodesG02F 1/134363 for applying an electric fi...G02F 1/134372 for fringe field switching ...
