Detecting a process endpoint from a change in reflectivity

• US 6,449,038 B1
• Filed: 12/13/1999
• Issued: 09/10/2002
• Est. Priority Date: 12/13/1999
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Stolze, Jens
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Nguyen, Sang H.
• Application Number:
  US09/460,198
• Time in Patent Office: 1,002 Days
• Field of Search: 356/311, 356/38, 356/318, 356/630, 438/16, 216/60, 156/345, 156/626, 156/627
• US Class Current: 356/316
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A substrate processing apparatus comprises a process chamber capable of processing a first material on the substrate. A radiation source is capable of emitting radiation that is reflected from the substrate during processing. A radiation detector is provided to detect the reflected radiation and generate a signal trace. A controller is adapted to receive the signal trace and evaluate an endpoint of processing the first material from a change in the signal trace that is distinctive of an exposure of a second material having a different reflectivity coefficient than the first material.

Claims

1. A substrate processing apparatus comprising:

a process chamber capable of processing a substrate comprising a first material formed as a layer covering a plug and having a first reflectivity coefficient, and a second material about the plug that has a second reflectivity coefficient;

a radiation source capable of emitting radiation that is reflected from the substrate during processing;

a radiation detector to detect the reflected radiation and generate a signal trace; and

a controller adapted to receive the signal trace and determine (i) an endpoint of processing the layer of first material and a startpoint of processing the plug of the first material from a change in the signal trace that is distinctive of an exposure of the plug of the first material and the second material having the second different reflectivity coefficient, and (ii) a depth of etching into the plug from periodic variations of the signal trace that correspond to maxima and minima interference peaks of the reflected radiation.

2. An apparatus according to claim 1 wherein the change in the signal trace corresponds to a change in intensity of the signal trace.

3. An apparatus according to claim 2 wherein the change in intensity results substantially entirely from the change in reflectivity coefficient.

4. An apparatus according to claim 1 wherein processing conditions are set to etch the first material until exposure of the second material.

5. An apparatus according to claim 1 wherein the controller comprises a computer having a memory capable of operating a computer-readable program embodied on a computer-readable medium, the computer readable program including program code to detect a change in intensity that results substantially entirely from the change in reflectivity.

6. An apparatus according to claim 1 wherein the radiation source is adapted to provide non-polarized radiation.

7. An apparatus according to claim 6 wherein the radiation source comprises a laser, LED or lamp.

8. An apparatus according to claim 1 wherein the radiation source is mounted above the substrate to direct a radiation beam at an incident angle of about 80 to 90 degrees onto the substrate.

29. An apparatus according to claim 1 wherein the first material comprises polysilicon and the second material comprises an oxide or nitride material.

33. An apparatus according to claim 1 further comprising a radiation positioner that is adapted to scan the radiation emitted by the radiation source across the substrate.

9. A substrate processing apparatus comprising:

(a) a chamber capable of processing a substrate comprising a first material formed as a layer covering a plug and having a first reflectivity coefficient, and a second material about the plug that has a second reflectivity coefficient;

(b) a radiation source capable of emitting non-polarized radiation that is reflected from the substrate during processing;

(c) a radiation detector to detect the reflected radiation and generate a signal trace; and

(d) a computer having a memory capable of operating a computer-readable program embodied on a computer-readable medium, the computer readable program including program code to receive the signal trace and detect (i) an endpoint of processing the layer of first material and a startpoint of processing the plug of first material from a change in the signal trace that is distinctive of exposure of the plug of the first material and the second material having the second reflectivity coefficient, and (ii) a depth of etching into the plug from periodic variations of the signal trace that correspond to maxima and minima interference peaks of the reflected radiation.

10. An apparatus according to claim 9 wherein the computer readable program includes program code to determine a change in intensity of the signal trace.

34. An apparatus according to claim 9 further comprising a radiation positioner that is adapted to scan the non-polarized radiation emitted by the radiation source a across the substrate.

11. A method of processing a substrate in a process zone, the method comprising the steps of:

(a) placing the substrate in the process zone, the substrate comprising a first material formed as a layer covering a plug and having a first reflectivity coefficient, and a second material about the plug that has a second reflectivity coefficient;

(b) setting process conditions in the process zone to process the first material on the substrate;

(c) detecting radiation reflected from the substrate during processing and generating a signal trace; and

(d) determining (i) an endpoint of processing the layer of the first material and a startpoint of processing the plug from a change in intensity of reflected radiation that is distinctive of exposure of the plug of the first material and the second material having the second different reflectivity coefficient, and (ii) a depth of etching into the plug from periodic variations of the signal trace that correspond to maxima and minima interference peaks of the reflected radiation.

12. A method according to claim 11 wherein the change in intensity results substantially entirely from the change in reflectivity coefficient from the first to the second material.

13. A method according to claim 11 further comprising directing a beam of non-polarized radiation onto the substrate.

14. A method according to claim 13 comprising directing the radiation beam at an incident angle of about 80 to 90 degrees onto the substrate.

15. A method according to claim 11 comprising setting process conditions to etch the first material to expose the second material.

30. A method according to claim 11 wherein the first material comprises polysilicon and the second material comprises an oxide or nitride material.

16. A substrate processing apparatus comprising:

a process chamber capable of sustaining a plasma to process a first material on the substrate;

a first radiation detector to detect a radiation emission from the plasma and generate a first signal;

a second radiation detector to detect a reflected radiation from the substrate and generate a second signal; and

a controller adapted to receive the first and second signals and determine an endpoint of processing of the first material on the substrate.

17. An apparatus according to claim 16 wherein the controller is adapted to evaluate the first signal to determine an averaged state of etching of the substrate.

18. An apparatus according to claim 16 wherein the controller is adapted to evaluate the second signal to determine a change in the second signal that is distinctive of the exposure of a second material having a different reflectivity coefficient than the first material.

19. An apparatus according to claim 18 wherein the change in the second signal comprises a change in intensity that results substantially entirely from a change in reflectivity coefficient.

20. An apparatus according to claim 16 wherein the substrate comprises a second material, and wherein processing conditions are set to etch the first material until exposure of the second material.

31. An apparatus according to claim 16 wherein the second radiation detector receives radiation reflected from a region of the substrate comprising a known thickness of the first material to generate the second signal, and wherein the controller receives the second signal trace and determines an average etching rate over the substrate and a local etching rate at the region.

21. A substrate processing apparatus comprising:

a process chamber capable of sustaining a plasma to process a first material on the substrate;

a first radiation detector to detect a radiation emission from the plasma and generate a first signal;

a second radiation detector to detect a reflected radiation from the substrate and generate a second signal; and

a computer having a memory capable of operating a computer-readable program embodied on a computer-readable medium, the computer readable program including program code to receive the first and second signals and determine an endpoint of processing the first material on the substrate.

22. An apparatus according to claim 21 wherein the computer readable program includes program code to evaluate the first signal to determine an averaged state of etching of the first material, and to evaluate the second signal to determine a change in signal that is distinctive of exposure of a second material having a different reflectivity coefficient than the first material.

32. An apparatus according to claim 21 wherein the second radiation detector receives radiation reflected from a region of the substrate comprising a known thickness of the first material to generate the second signal, and wherein the controller receives the second signal trace and determines an average etching rate over the substrate and a local etching rate at the region.

23. A method of processing a substrate in a process zone, the method comprising the steps of:

(a) placing the substrate in the process zone;

(b) forming a plasma of process gas in the process zone to process a first material on the substrate;

(c) detecting radiation emitted by the plasma;

(d) detecting radiation reflected from the substrate; and

(e) determining an endpoint of processing the material from a change in the radiation emitted by the plasma and a change in the radiation reflected from the substrate.

24. A method according to claim 23 comprising evaluating a change in radiation emitted by the plasma to determine an averaged state of etching of the substrate.

25. A method according to claim 23 comprising identifying a distinctive change in radiation reflected from the substrate to determine exposure of a second material having a different reflectivity coefficient than the first material.

26. A method according to claim 23 comprising identifying a distinctive change in radiation that substantially entirely results from a change in reflectivity coefficient of the substrate.

27. A method according to claim 23 comprising setting process conditions to etch the first material to expose a second material.

28. A method according to claim 23 further comprising directing nonpolarized radiation onto the substrate.