Method for driving semiconductor memory

• US 6,449,184 B2
• Filed: 06/13/2001
• Issued: 09/10/2002
• Est. Priority Date: 06/19/2000
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kato, Yoshihisa, Shimada, Yasuhiro
• Primary Examiner(s): Phan, Trong
• Application Number:
  US09/879,079
• Publication Number:
  US 20010053087A1
• Time in Patent Office: 454 Days
• Field of Search: 365/145, 365/149
• US Class Current: 365/145
• CPC Class Codes: G11C 11/22 using ferroelectric elements
• CPC Class Codes: G11C 11/223 using MOS with ferroelectric gate insulating film

Abstract

In a method for driving a semiconductor memory including a ferroelectric capacitor for storing a multi-valued data in accordance with a displacement of polarization of a ferroelectric film and a detector connected to one of an upper electrode and a lower electrode of the ferroelectric capacitor for detecting the displacement of the polarization of the ferroelectric film, the multi-valued data is read by detecting the displacement of the polarization of the ferroelectric film by the detector under application of a reading voltage to the other of the upper electrode and the lower electrode of the ferroelectric capacitor, and then, the reading voltage applied to the latter electrode is removed. The reading voltage has such magnitude that the displacement of the polarization of the ferroelectric film is restored to that obtained before reading the multi-valued data by removing the reading voltage.

Claims

1. A method for driving a semiconductor memory including a ferroelectric capacitor for storing a multi-valued data in accordance with a displacement of polarization of a ferroelectric film thereof and detection means connected to a first electrode corresponding to one of an upper electrode and a lower electrode of said ferroelectric capacitor for detecting the displacement of the polarization of said ferroelectric film, comprising:

a first step of reading said multi-valued data by detecting the displacement of the polarization of said ferroelectric film by said detection means with a reading voltage applied to a second electrode corresponding to the other of said upper electrode and said lower electrode of said ferroelectric capacitor; and

a second step of removing said reading voltage applied to said second electrode,

wherein said reading voltage applied in the first step has such magnitude that the displacement of the polarization of said ferroelectric film is restored to that obtained before reading said multi-valued data by removing said reading voltage in the second step.

2. The method for driving a semiconductor memory of claim 1, further comprising, after the second step, a third step of making a potential difference between said upper electrode and said lower electrode of said ferroelectric capacitor zero.

3. The method for driving a semiconductor memory of claim 2,

wherein the third step includes a sub-step of applying a voltage with polarity different from polarity of said reading voltage to said first electrode before making said potential difference zero.

4. The method for driving a semiconductor memory of claim 2,

wherein said semiconductor memory includes a switch for equalizing the potentials of said first electrode and said second electrode of said ferroelectric capacitor, and

the third step includes a sub-step of making said potential difference zero with said switch.

5. The method for driving a semiconductor memory of claim 2,

wherein said semiconductor memory includes a switch for equalizing the potentials of said first electrode of said ferroelectric capacitor and potential, and

the third step includes a sub-step of applying a constant potential to said second electrode of said ferroelectric capacitor and making said potential difference zero with said switch.

6. The method for driving a semiconductor memory of claim 1,

wherein said reading voltage applied in the first step has such magnitude that a voltage applied between said first electrode and said second electrode of said ferroelectric capacitor when said reading voltage is applied is smaller than a coercive voltage of said ferroelectric capacitor.

7. The method for driving a semiconductor memory of claim 1,

wherein said detection means has a load capacitor,

the first step includes a sub-step of applying said reading voltage to both ends of a series circuit composed of said ferroelectric capacitor and said load capacitor, and

said detection means detects the displacement of the polarization of said ferroelectric film by detecting a voltage applied to said load capacitor that is obtained by dividing said reading voltage in accordance with a ratio between the capacitance of said ferroelectric capacitor and the capacitance of said load capacitor.

8. The method for driving a semiconductor memory of claim 1,

wherein said detection means includes a field effect transistor formed on a substrate and having a gate electrode connected to said first electrode of said ferroelectric capacitor,

the first step includes a sub-step of applying said reading voltage between said second electrode of said ferroelectric capacitor and said substrate, and

said detection means detects the displacement of the polarization of said ferroelectric film by detecting a current flowing between a drain region and a source region of said field effect transistor when a voltage obtained by dividing said reading voltage in accordance with a ratio between the capacitance of said ferroelectric capacitor and the gate capacitance of said field effect transistor is applied to said gate electrode of said field effect transistor.

9. A method for driving a semiconductor memory including a plurality of successively connected ferroelectric capacitors each storing a multi-valued data in accordance with the displacement of polarization of a ferroelectric film thereof, a plurality of selecting transistors respectively connected to said plurality of ferroelectric capacitors for selecting one of said ferroelectric capacitors for reading said multi-valued data, and detection means connected to one end of said plurality of successively connected ferroelectric capacitors for reading said multi-valued data by detecting the displacement of the polarization of said ferroelectric film included in one ferroelectric capacitor selected by said selecting transistors, comprising:

a first step of applying a reading voltage to one of an upper electrode and a lower electrode of each of said ferroelectric capacitors; and

a second step of removing said reading voltage applied to said one electrode,

wherein said reading voltage applied in the first step has such magnitude that the displacement of the polarization of said ferroelectric film is restored to that obtained before reading said multi-valued data by removing said reading voltage in the second step.

10. The method for driving a semiconductor memory of claim 9, further comprising, after the second step, a third step of making a potential difference between said upper electrode and said lower electrode of said ferroelectric capacitor zero.