Surface-emitting laser

• US 6,449,300 B1
• Filed: 03/02/2000
• Issued: 09/10/2002
• Est. Priority Date: 03/05/1999
• Status: Expired due to Fees

• Current Assignee: Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Original Assignee: Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Inventors: Koyama, Fumio, Nishiyama, Nobuhiko, Iga, Kenichi
• Primary Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US09/517,182
• Time in Patent Office: 922 Days
• Field of Search: 372/46, 372/96, 372/92, 372/45, 372/44, 372/50, 438/39
• US Class Current: 372/46.013
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/06226 Modulation at ultra-high frequencies
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials

Abstract

A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively,

one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector,

the other constituting a second conductive type Bragg reflector.

Claims

1. A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, further comprising

a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and

plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in the remote junction surface constituting the current stenosed layer,

at least one of the first and second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively,

one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector,

the other constituting a second conductive type Bragg reflector,

the thickness of each capacitance-reducing layer being set to about 80 nm.

2. A surface-emitting laser a defined in claim 1, wherein the first and the second distributed Bragg reflectors are composed of alternately stacked Ga_xAl₁₋

xAs (wherein 0≦

x≦

1) layers and Ga_yAl<sub>1−

y</sub>As (wherein 0≦

y≦

1).

3. A surface-emitting laser as defined in claim 1, wherein the current stenosed layer is composed of an AlAs layer and the capacitance-reducing layer is composed of AlAs layer having a thinner thickness than that of the current stenosed layer.

4. A surface-emitting laser as defined in claim 1, wherein the current stenosed layer is composed of plural semiconductor layers, the semiconductor layer at its junction surface being composed of AlAs layer having a thickness of 10-30 nm and the capacitance-reducing layer is composed of GaAlAs.

5. A surface-emitting laser as defined in claim 1, wherein the current stenosed layer is composed of plural semiconductor layers, the semiconductor layer at its junction surface being composed of AlAs layer having a thickness of 10-30 nm and the capacitance-reducing layer is composed of GaAlAs.