Optical temperature measurement as an in situ monitor of etch rate

• US 6,450,683 B1
• Filed: 04/25/2000
• Issued: 09/17/2002
• Est. Priority Date: 02/01/2000
• Status: Active Grant

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Lee, Szetsen Steven
• Primary Examiner(s): Gutierrez, Diego
• Assistant Examiner(s): VERBITSKY, GAIL KAPLAN
• Application Number:
  US09/557,125
• Time in Patent Office: 875 Days
• Field of Search: 374/142, 374/45, 374/120, 374/161, 374/121, 438/9, 438/16, 438/723, 438/714, 216/60, 216/67, 216/79, 216/80, 156/345
• US Class Current: 374/45
• CPC Class Codes: G01J 5/60 using determination of colour temperature
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

The present invention provides a method and apparatus of using optical temperature measurement as an in-situ monitoring of etch rate. First of all, a plasma etching process is performed in a plasma etcher having a vacuum chamber. Then, an optical multi-channel analyzer (OMA) monitors a series of emission lines of a certain plasma species emitted from the vacuum chamber during the plasma etching process. Then, based on the intensity distribution of the emission lines detected, a computer computes and generates an optical temperature. Finally, the computer generates a relevant ER based on the optical temperature. The emission lines are emitted due to the transitions between different energy states of a certain plasma species. These transitions may be between different electronic energy states, vibrational energy states, or rotational energy states, whereas the plasma species may be any one of the reactants in the plasma chamber such as CO, CO₂, CF, CF₂, SiF, C₂, HF, etc.

Claims

1. A method of using optical temperature measurement as an in-situ monitor of etch rate, comprising the steps of:

performing a plasma process in a plasma etcher;

monitoring, during the plasma process, a series of emission lines emitted by a certain plasma species;

determining an intensity distribution of the emission lines;

obtaining an optical temperature based on the intensity distribution of the emission lines; and

;

obtaining an etch rate based on the optical temperature.

2. The method as claimed in claim 1, wherein the emission lines are emitted due to transitions between different energy states of the plasma species.

3. The method as claimed in claim 1, wherein the plasma process uses at least one reactive gas, and the plasma species is one of the reactive gases.

4. The method as claimed in claim 1, wherein the plasma species is selected from the group consisting CO, CO₂, CF, CF₂, SiF, C₂ and HF.

5. The method as claimed in claim 1, wherein the emission lines are emitted due to transitions between different electronic energy states of the plasma species.

6. The method as claimed in claim 1, wherein the emission lines are emitted due to transitions between different rotational energy states of the plasma species.

7. The method as claimed in claim 1, wherein the emission lines are emitted due to transitions between different vibrational energy states of the plasma species.

8. An apparatus using optical temperature measurement as an in-situ monitor of etch rate, comprising:

a vacuum chamber for processing a plasma process;

an optical multi-channel analyzer for monitoring, during the plasma process, a series of emission lines emitted by a certain plasma species in the vacuum chamber, and

a computer for determining an intensity distribution of the emission lines, calculating an optical temperature based on the intensity distribution of the emission lines and obtaining a relevant etch rate from the optical temperature.

9. The apparatus as claimed in claim 8, wherein the emission lines are emitted due to transitions between different energy states of the plasma species.

10. The apparatus as claimed in claim 8, wherein the plasma process uses at least one reactive gas, and the plasma species is one of the reactive gases.

11. The apparatus as claimed in claim 8, wherein the plasma species is selected from the group consisting CO, CO₂, CF, CF₂, SiF, C₂ and HF.

12. The apparatus as claimed in claim 8, wherein the emission lines are emitted due to transitions between different electronic energy states of the plasma species.

13. The apparatus as claimed in claim 8, wherein the emission lines are emitted due to transitions between different rotational energy states of the plasma species.

14. The apparatus as claimed in claim 8, wherein the emission lines are emitted due to transitions between different vibrational energy states of the plasma species.