Interference layer system

• US 6,451,178 B2
• Filed: 10/28/1997
• Issued: 09/17/2002
• Est. Priority Date: 10/28/1996
• Status: Expired due to Term

• Current Assignee: Unaxis Deutschland Holdings GmbH (OC Oerlikon Corporation AG)
• Original Assignee: Leybold Systems GmbH
• Inventors: Szczyrbowski, Joachim, Bräuer, Günter
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US08/959,633
• Publication Number:
  US 20010006148A1
• Time in Patent Office: 1,785 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.22, 204/192.23, 204/298.08, 204/298.23, 204/298.24, 204/192.29, 204/192.13
• US Class Current: 204/192.13
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/366 Low-emissivity or solar control coatings
• CPC Class Codes: C03C 2217/212 TiO2
• CPC Class Codes: C03C 2217/734 comprising an alternation of high and low refractive indexes
• CPC Class Codes: C03C 2218/155 by reactive sputtering
• CPC Class Codes: C03C 2218/156 by magnetron sputtering
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/3471 Introduction of auxiliary energy into the plasma

Abstract

A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO₂ layer or an SiO₂ layer.

Claims

1. A process for sputter-induced precipitation of a TiO₂-layer on a substance to be coated with a reactive sputter process comprising:

providing a plasma reaction chamber;

providing a target material to be evaporated by a plasma discharge acting on the target material;

providing at least two magnetron electrodes arranged in close relationship to each other in the plasma reaction chamber, the magnetron electrodes being connected to an AC electric source;

maintaining a substrate to be coated in stationary relation to the target material to be evaporated during the coating process;

introducing oxygen as a reaction gas into the reaction chamber so as to produce a defined oxygen pressure in the reaction chamber;

providing the plasma discharge;

providing AC electric power to the plasma discharge acting upon the target material by means of said at least two electrodes, said electric power and said oxygen pressure being selected such that said TiO₂-layer to be precipitated on the substrate is deposited at a precipitation rate greater than or equal to 4 nm/s and that said TiO₂-layer is formed in a structure consisting of rutile; and

maintaining the substrate to be coated in stationary relation to the target material to be evaporated during the process.

2. The process according to claim 1, wherein the frequency of the AC current applied to the plasma discharge ranges between 10 kHz and 80 kHz.

3. A process according to claim 2 further comprising:

providing an oxygen sensor for measuring the oxygen pressure in the reaction chamber;

controlling the sputter process in accordance with the output of the oxygen sensor.

4. A process according to claim 2, wherein said sputter process comprises setting of the oxygen pressure such that a burning of the electrodes with a high sputter rate and low electrode output is achieved.

5. A process according to claim 1 further comprising:

providing an oxygen sensor for measuring the oxygen pressure in the reaction chamber;

controlling the sputter process in accordance with the output of the oxygen sensor.

6. A process according to claim 1, wherein said sputter process is controlled by setting the oxygen pressure such that a burning of the electrodes with a high sputter rate and low electrode output is achieved.

7. A process for sputter-induced precipitation of a TiO₂-layer on a substrate by means of a reactive sputter process, said process comprising:

providing a plasma reaction chamber;

providing a sputter target to be evaporated by a plasma discharge acting on the sputter target;

providing at least two magnetron electrodes arranged in close relationship to each other in the plasma reaction chamber, the magnetron electrodes being connected to an AC electric source;

moving the substrate to be coated along in front of the sputter target to be evaporated during the coating process;

introducing oxygen as a reaction gas into the reaction chamber so as to produce a defined oxygen pressure in the reaction chamber;

providing the plasma discharge;

providing electric power to the plasma discharge acting upon the sputter target by means of said at least two electrodes,

electric power and said oxygen pressure being selected such that said TiO₂-layer to be precipitated on the substrate to be coated is deposited at a precipitation rate greater than or equal to 40 nm/min and that said TiO₂-layer is formed in structure consisting of rutile.

8. The process according to claim 7, wherein said at least two magnetron electrodes are connected in a conductive manner to outputs of an alternating current source whereby an alternating frequency of the alternating current provided for the electrical power of the plasma discharge is selected between 10 kHz and 80 kHz.

9. A process according to claim 7, further comprising:

providing an oxygen sensor for measuring the oxygen pressure in the reaction chamber;

controlling the sputter process in accordance with the output of the oxygen sensor.

10. A process according to claim 7, wherein said sputter process is controlled by setting the oxygen pressure such that a burning of the electrodes with a high sputter rate and low electrode output is achieved.