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Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

  • US 6,451,504 B2
  • Filed: 01/31/2001
  • Issued: 09/17/2002
  • Est. Priority Date: 12/04/1995
  • Status: Expired due to Fees
First Claim
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1. A semiconductor processing method comprising:

  • providing a substrate;

    providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface;

    providing the substrate having the Si3N4 layer within a chemical vapor deposition reactor;

    feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si3N4 layer outer surface, the deposited silicon layer being provided to a thickness of less than or equal to about 30 Angstroms; and

    forming a layer of photoresist in physical contact with the deposited silicon layer.

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