Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
First Claim
1. A semiconductor processing method comprising:
- providing a substrate;
providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface;
providing the substrate having the Si3N4 layer within a chemical vapor deposition reactor;
feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si3N4 layer outer surface, the deposited silicon layer being provided to a thickness of less than or equal to about 30 Angstroms; and
forming a layer of photoresist in physical contact with the deposited silicon layer.
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Abstract
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.
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Citations
4 Claims
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1. A semiconductor processing method comprising:
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providing a substrate;
providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface;
providing the substrate having the Si3N4 layer within a chemical vapor deposition reactor;
feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si3N4 layer outer surface, the deposited silicon layer being provided to a thickness of less than or equal to about 30 Angstroms; and
forming a layer of photoresist in physical contact with the deposited silicon layer. - View Dependent Claims (2)
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3. A semiconductor processing method comprising:
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providing a substrate;
providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface;
providing the substrate having the Si3N4 layer within a chemical vapor deposition reactor;
feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si3N4 layer outer surface, the deposited silicon layer being provided to a thickness of from about 10 Angstroms to about 30 Angstroms; and
forming a layer of photoresist in physical contact with the deposited silicon layer. - View Dependent Claims (4)
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Specification