Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

• US 6,451,504 B2
• Filed: 01/31/2001
• Issued: 09/17/2002
• Est. Priority Date: 12/04/1995
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Niroomand, Ardavan, Rolfson, J. Brett, Martin, Annette L.
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US09/773,462
• Publication Number:
  US 20010023051A1
• Time in Patent Office: 594 Days
• Field of Search: 430/166, 430/272.1, 430/311, 430/327, 438/791, 438/764, 438/778, 438/763, 438/948
• US Class Current: 430/272.1
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: Y10S 438/948 Radiation resist

Abstract

A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si₃N₄ outwardly of the substrate, the outer Si₃N₄ layer having an outer surface; c) covering the outer Si₃N₄ surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si₃N₄ surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si₃N₄ layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si₃N₄ outwardly of the substrate, the outer Si₃N₄ layer having an outer surface; ii) transforming the outer Si₃N₄ surface into a material effective to promote adhesion of photoresist to the Si₃N₄ layer; and iii) depositing a layer of photoresist over the transformed outer Si₃N₄ surface, the photoresist adhering to the Si₃N₄ layer with a greater degree of adhesion than would otherwise occur if the outer Si₃N₄ surface were not transformed.

Claims

1. A semiconductor processing method comprising:

providing a substrate;

providing an outer layer of Si₃N₄ outwardly of the substrate, the outer Si₃N₄ layer having an outer surface;

providing the substrate having the Si₃N₄ layer within a chemical vapor deposition reactor;

feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si₃N₄ layer outer surface, the deposited silicon layer being provided to a thickness of less than or equal to about 30 Angstroms; and

forming a layer of photoresist in physical contact with the deposited silicon layer.

2. The method of claim 1 wherein the silicon containing precursor is dichlorosilane.

3. A semiconductor processing method comprising:

providing a substrate;

providing an outer layer of Si₃N₄ outwardly of the substrate, the outer Si₃N₄ layer having an outer surface;

providing the substrate having the Si₃N₄ layer within a chemical vapor deposition reactor;

feeding a gaseous silicon containing precursor to the reactor under conditions effective to deposit a silicon layer over the Si₃N₄ layer outer surface, the deposited silicon layer being provided to a thickness of from about 10 Angstroms to about 30 Angstroms; and

forming a layer of photoresist in physical contact with the deposited silicon layer.

4. The method of claim 3 wherein the silicon containing precursor is dichlorosilane.