Method of forming copper interconnection utilizing aluminum capping film

• US 6,451,681 B1
• Filed: 10/04/1999
• Issued: 09/17/2002
• Est. Priority Date: 10/04/1999
• Status: Expired due to Term

• Current Assignee: VLSI Technology LLC (FIG LLC (d/b/a Fortress Investment Group LLC))
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Greer, Stuart E.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Lytle, Craig P.
• Application Number:
  US09/411,266
• Time in Patent Office: 1,079 Days
• Field of Search: 438/132, 438/612, 438/613, 438/617, 438/618, 438/654, 438/64, 438/614, 438/130, 438/601
• US Class Current: 438/601
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05018 being a conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05562 On the entire exposed surface of the internal layer
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A mostly copper-containing interconnect (126) overlies a semiconductor device substrate (100), and a transitional metallurgy structure (312, 508, 716, 806) that includes an aluminum-containing film (200, 506, 702, 802) contacts a portion of the mostly copper-containing interconnect. In one embodiment, the transitional metallurgy is formed over a portion of a bond pad (128). In an alternative embodiment, the transitional metallurgy includes an energy alterable fuse portion (710) that electrically contacts two conductive regions (712 and 714), and in yet another embodiment, the transitional metallurgy is formed over a copper-containing edge seal portion (809).

Claims

1. A method for forming a semiconductor device, comprising:

forming a first mostly copper-containing bond pad overlying a semiconductor device substrate;

forming a chromium-containing adhesion film over the mostly copper-containing bond pad;

forming an aluminum-containing capping film overlying the chromium-containing adhesion film;

forming at least two conductive regions over the semiconductor device substrate; and

connecting the aluminum-containing capping film to the at least two conductive regions and rendering the connection laser alterable.

2. The method of claim 1, wherein the adhesion film has a thickness in a range of approximately 50 nanometers to 200 nanometers.

3. The method of claim 1, wherein the aluminum-containing capping film has a thickness in a range of approximately 200 nanometers to 1500 nanometers.

4. The method of claim 1, further comprising forming a passivation layer overlying the aluminum-containing capping film, wherein the passivation layer has an opening that exposes a portion of the aluminum-containing capping film.

5. The method of claim 1, further comprising:

forming a passivation layer over the copper-containing bond pad; and

forming an opening in the passivation layer, wherein forming the opening is performed prior to forming the aluminum-containing capping film and exposes a portion of the copper-containing bond pad.

6. The method of claim 1, further comprising:

forming a pad limiting metal layer that electrically contacts the aluminum-containing capping film; and

forming a conductive bump that electrically contacts the pad limiting metal layer.

7. The method of claim 6, wherein the pad limiting metal layer includes a material selected from the group consisting of titanium, chrome, nickel, copper and gold.

8. The method of claim 1 further comprising forming a conductive bump overlying the aluminum-containing capping film.

9. The method of claim 1, further comprising bonding a wire to the aluminum-containing capping film.

10. The method of claim 1, further comprising:

forming a seed layer overlying the aluminum-containing capping film; and

electrolessly plating a conductive post over the seed layer, wherein the conductive post is adapted to receive a conductive bump.

11. The method of claim 10, wherein the conductive post include a material selected from a group consisting of nickel, copper, and gold.

12. The method of claim 1, wherein forming the aluminum-containing capping film further comprises selectively depositing the aluminum-containing capping film over a portion of the first mostly copper-containing bond pad.

13. The method of claim 1, further comprising testing an electrical circuit prior to attaching one of a conductive bump and a bonding wire connection to the aluminum-containing capping film, wherein testing includes physical contact between the aluminum-containing capping film and an electrical probe, and wherein the aluminum-containing capping film prevents physical contact between the electrical probe and the mostly copper containing bond pad.

14. A method for forming a semiconductor device, comprising:

forming a mostly copper-containing bond pad overlying a semiconductor device substrate;

forming at least two conductive regions over a semiconductor device substrate;

forming an aluminum-containing capping film overlying a portion of the mostly copper-containing bond pad, wherein portions of the aluminum-containing capping film also form a connection between the at least two conductive regions; and

rendering the connection laser alterable.