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High voltage mosgated device with trenches to reduce on-resistance

  • US 6,452,230 B1
  • Filed: 12/23/1999
  • Issued: 09/17/2002
  • Est. Priority Date: 12/23/1998
  • Status: Expired due to Term
First Claim
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1. A high voltage MOSgated device of low on-resistance comprising, in combination;

  • a thin flat chip of silicon having a main body layer of one conductivity type and having relatively high concentration and a junction-receiving layer of said one conductivity type and of a relatively lower concentration disposed atop said main body layer;

    a plurality of spaced base diffusions of the other conductivity type formed in the upper surface of said junction receiving layer and a plurality of source regions of said one conductivity type formed in respective ones of said base diffusions to define invertable channel regions laterally spaced from one another by a vertical conduction channel region in said junction receiving layer; and

    a MOSgate structure disposed above each of said invertible channels and responsive to a suitable MOSgate input signal;

    a plurality of spaced thin trenches extending vertically from the top of said junction receiving layer for at least a major portion of the thickness of said junction receiving layer;

    a first main contact disposed above the top surface of said junction receiving layer and in contact with said source and base diffusions and said trenches;

    a second main contact formed on the bottom of said main body layer;

    said trenches defining between them vertical depletable vertical conduction regions in said junction receiving layer for the length of said trenches;

    each of said trenches being filled with a semi-insulating, non-injecting material which is relatively incapable of carrier injection into the junction receiving layer.

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