Semiconductor device having SOI structure and manufacturing method thereof
First Claim
1. A semiconductor device with a SOI structure comprising:
- a SOI substrate having a buried insulating film and a first conductivity type surface semiconductor layer on the buried insulating film;
second conductivity type source and drain regions formed in the surface semiconductor layer;
a gate electrode formed over a first conductivity type channel region between the source and drain regions via a gate insulating film;
impurity diffusion regions of the first conductivity type in the surface semiconductor layer below the source and drain regions;
wherein the source and drain regions are thinner than the surface semiconductor layer, and the channel region in the surface semiconductor layer has a first conductivity type high-concentration impurity diffusion region whose first conductivity type impurity concentration is higher than that in a surface of the channel region and higher than that of the impurity diffusion regions, and wherein the high-concentration impurity diffusion region is adjacent to the buried insulating film.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device with a SOI structure comprises; a SOI substrate having a buried insulating film and a first conductivity type surface semiconductor layer on the buried insulating film; second conductivity type source and drain regions formed in the surface semiconductor layer; and a gate electrode formed over a first conductivity type channel region between the source and drain regions via a gate insulating film, wherein the source and drain regions are thinner than the surface semiconductor layer, and the channel region in the surface semiconductor layer has a first conductivity type high-concentration impurity diffusion region whose first conductivity type impurity concentration is higher than that in a surface of the channel region and which is adjacent to the buried insulating film.
158 Citations
10 Claims
-
1. A semiconductor device with a SOI structure comprising:
-
a SOI substrate having a buried insulating film and a first conductivity type surface semiconductor layer on the buried insulating film;
second conductivity type source and drain regions formed in the surface semiconductor layer;
a gate electrode formed over a first conductivity type channel region between the source and drain regions via a gate insulating film;
impurity diffusion regions of the first conductivity type in the surface semiconductor layer below the source and drain regions;
wherein the source and drain regions are thinner than the surface semiconductor layer, and the channel region in the surface semiconductor layer has a first conductivity type high-concentration impurity diffusion region whose first conductivity type impurity concentration is higher than that in a surface of the channel region and higher than that of the impurity diffusion regions, and wherein the high-concentration impurity diffusion region is adjacent to the buried insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
-
-
9. A semiconductor device comprising:
-
a SOI substrate including a buried insulating film, and a first conductivity type surface semiconductor layer on the buried insulating film;
source and drain regions of a second conductivity type, formed in the surface semiconductor layer;
a gate electrode formed over a first conductivity type channel region between the source and drain regions;
at least one impurity diffusion region of the first conductivity type in the surface semiconductor layer below at least one of the source and drain regions;
wherein the source and drain regions are thinner than the surface semiconductor layer, and the channel region in the surface semiconductor layer below the gate electrode includes both (a) a first conductivity type impurity diffusion region adjacent to the buried insulating film, and (b) a surface region at a surface of the channel; and
wherein first conductivity type impurity concentration is higher in (a) than in both (b) and the at least one impurity diffusion region.
-
Specification