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How to improve the ESD on SOI devices

  • US 6,452,234 B1
  • Filed: 11/27/2000
  • Issued: 09/17/2002
  • Est. Priority Date: 11/27/2000
  • Status: Expired due to Term
First Claim
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1. A protection circuit structure for providing electrostatic discharge protection capability to silicon-on-insulator integrated circuits, said protection circuit structure comprising in combination:

  • a SOI structure including a transistor device including a source region, a drain region and a channel region all formed in a thin oxide layer overlying an insulating layer;

    said insulating layer being formed over a p-type silicon substrate;

    said thin oxide layer being formed over said insulating layer;

    a p-type conductive region being formed in an upper portion of said insulating layer;

    said p-type conductive region being spaced laterally apart from said SOI structure so that portions of said insulating layer surround the outer sides of said p-type conductive region to provide electrical isolation;

    a metal conductive region being formed in the center of said p-type conductive region and extending between the top surface of said thin oxide layer and the bottom surface of said insulating layer;

    an n-type conductive region being formed in said p-type silicon substrate adjacent to the bottom surface of said metal conductive region so as to define a protection diode with said p-type silicon substrate;

    an electrically conductive input or input/output (I/O) pad formed over the top surface of said thin oxide layer; and

    a conductive lead being operatively joined between said input pad and one of said source and drain regions of the transistor device.

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