Method and apparatus for detecting defects in the manufacture of an electronic device

• US 6,452,677 B1
• Filed: 02/13/1998
• Issued: 09/17/2002
• Est. Priority Date: 02/13/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Taylor, Ted, Do, Douglas
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Nguyen, Sang H.
• Application Number:
  US09/023,925
• Time in Patent Office: 1,677 Days
• Field of Search: 356/372, 356/373, 356/388, 356/390, 356/394, 356/237--, 250/310, 250/307, 250/201.3, 324/751, 382/170, 382/286
• US Class Current: 356/394
• CPC Class Codes: G01N 21/95684 Patterns showing highly reflecting parts, e.g. metallic elements
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

The invention provides a unique method and apparatus for detecting defects in an electronic device. In one preferred embodiment, the electronic device is a semiconductor integrated circuit (IC), particularly one of a plurality of IC dies fabricated on a wafer of silicon or other semiconductor material. The defect detection operation is effectuated by a unique combination of critical dimension measurement and pattern defect inspection techniques. During the initial scan of the surface of the wafer, in an attempt to locate the appropriate area for a critical dimension (CD) feature or element that is to be measured, a “best fit” comparison is made between a reference image and scanned images. The critical dimension measurements are conducted on a “best fit” image. In addition, a “worst fit” comparison is made between the reference and scanned images. A “worst fit” determination represents pattern distortions or defects in the ICs under evaluation.

Claims

1. A testing device for use in detecting defects in the manufacture of an electronic device, the testing device comprising:

a critical dimension measuring unit operative to scan and measure features of the electronic device at a measurement site which is indicative of a defect in the manufacture of the electronic device; and

a pattern inspection unit operative to detect a pattern defect in the manufacture of the electronic device located at said measurement site, said pattern inspection unit utilizing images obtained during operation of said critical dimension measuring unit.

2. The testing device as in claim 1, wherein said critical dimension measuring unit includes a scanning electron-beam microscope.

3. A testing device as in claim 1, wherein said critical dimension measuring unit obtains a plurality of images of an electronic device as said critical dimension measuring unit scans said electronic device to find a proper location for performing a critical dimension measurement.

4. A testing device as in claim 3, wherein said critical dimension measuring unit compares a plurality of first images, each of which is at least a portion of one of said plurality of obtained images, with a reference image and provides an indication of a degree of similarity between the compared images.

5. A testing device as in claim 4, wherein said critical dimension measurement unit obtains a plurality of images from each of a plurality of measurement sites.

6. A testing device as in claim 4, wherein said critical dimension measuring unit stores each first image which is compared with said reference image together with an associated indication of the similarity of each first image to said reference image.

7. A testing device as in claim 6, wherein said pattern inspecting unit identifies as defective a pattern contained in any of said first images which has an associated similarity indication which is below a second similarity threshold.

8. A testing device as in claim 6, wherein said pattern inspecting unit identifies as defective a pattern contained in any of said first images which has an associated similarity indication which is below a second similarity threshold and above a noise threshold.

9. A testing device as in claim 6, wherein said pattern inspection unit is operative to perform a comparison between said reference pattern and a pattern within a first image, which first image has a similarity indication which is below a second similarity threshold.

10. A testing device as in claim 6, wherein said pattern inspection unit is operative to perform a comparison between said reference pattern and a pattern within a first image, which first image has a similarity indication which is below a second similarity threshold and above a noise threshold.

11. A testing device as in claim 6, wherein said critical dimension measuring unit performs critical dimension measurements on features contained within a first image which has an associated similarity indication which exceeds a first similarity threshold.

12. A testing device as in claim 11, wherein said critical dimension measuring unit places a critical dimension measuring window over a feature of said first image and scans said image to the extent defined by said window, and executes a measurement algorithm to obtain critical dimension measurement data.

13. A testing device as in claim 12, wherein said critical dimension measurement unit stores said critical dimension measurement data together with data identifying the site of the critical dimension measurement.

14. A testing device as in claim 12, wherein said pattern inspection unit is operative after said critical dimension measurement unit obtains said critical dimension measurement data.

15. A testing device as in claim 11, wherein said critical dimension measuring unit indicates an error for said measurement site if none of said first images has an associated similarity indication which exceeds said first similarity threshold.

16. A testing device as in claim 11, wherein said first similarity threshold is preset by an operator.

17. A testing device as in claim 11, wherein said critical dimension measuring unit evaluates the similarity indications of all said first images and sets said first similarity threshold based on said evaluation.

18. A testing device as in claim 17, wherein said critical dimension measuring unit sets said first similarity threshold so that only a first image having the highest similarity indication exceeds said first similarity threshold.

19. A testing device as in claim 11, wherein said critical dimension measuring unit conducts a procedure to rescan said electronic device at a location near said measurement site in an attempt to obtain a plurality of images from which a first image which has a similarity indication which exceeds said first similarity threshold can be obtained.

20. A testing device as in claim 19, wherein said critical dimension measuring unit conducts said procedure a predetermined number of times and if a first image which has a similarity indication which exceeds said first similarity threshold still cannot be obtained an error is indicated for said measurement site.

21. A testing device as in claim 19, wherein said critical dimension measuring unit conducts said procedure a predetermined number of times and if a first image which has a similarity indication which exceeds said first similarity threshold still cannot be obtained, and if a first image which has a similarity indication which falls below a second threshold cannot be obtained, an error is indicated for said measurement site.

22. A testing device as in claim 11, wherein if none of said first images has an associated similarity indication which exceeds said first similarity threshold, said pattern inspection unit examines said first images to determine if any of said first images has a similarity indication which is below a second similarity threshold.

23. A testing device as in claim 22, wherein if none of said first images has a similarity indication which is below a second similarity threshold, said critical dimension measuring unit stores an error indication for the measurement site.

24. A testing device as in claim 22, wherein if a said first image has a similarity indication which is below said second similarity threshold, it is identified as representing a defective pattern.

25. A testing device as in claim 22, wherein if none of said first images has a similarity indication which is below a second similarity threshold, said critical dimension measuring unit conducts a procedure to rescan said electronic device at a location near said measurement site in an attempt to obtain a plurality of images from which a first image which has a similarity indication which exceeds said first similarity threshold can be obtained.

26. An inspection station subsystem comprising:

a microscope which illuminates an object and generates an image corresponding to the object;

an image analyzer, which receives the image generated by said microscope, said image analyzer formulating a similarity value based on similarities between the image and a reference image;

a comparing unit which compares the similarity value with first and second reference values;

a critical dimension measuring unit for performing a critical dimension measurement on the image when said comparing unit indicates that the similarity value exceeds the first reference value; and

a pattern inspection unit which performs a defect detection on the image when said comparing unit indicates that the similarity value is below the second reference value.

27. The inspection station subsystem of claim 26, wherein the object is a semiconductor device having a pattern where a critical dimension measurement is to be made.

28. The inspection station subsystem of claim 27, wherein the object is a semiconductor device having a pattern, the image representing said pattern, said pattern inspection unit detecting a defect in the semiconductor device when the image does not substantially match a reference pattern.

29. The inspection station subsystem of claim 26, further comprising:

a threshold signal generator, responsive to said comparing unit, for generating a measurement signal for initiating a critical dimension measurement when the similarity value exceeds the first reference value; and

said critical dimension measuring unit measuring a critical dimension of at least one element of the object in response to said measurement signal.

30. The inspection station subsystem of claim 29, wherein said object is a semiconductor device and said critical dimension measuring unit measures a critical dimension of said semiconductor device.

31. A system for measuring the size of one of a plurality of features of an integrated circuit fabricated on a semiconductor wafer, wherein respective ones of the plurality of features appear at different locations on the semiconductor wafer, the system comprising:

an electron microscope for forming an image of an area on the semiconductor wafer;

a controller for causing said microscope to examine and create images for different areas on the semiconductor wafer;

a storage unit for storing a reference image;

a size measuring device for measuring, in response to a first enabling signal, the size of at least one of the features of the semiconductor wafer located within an image area of said microscope;

a pattern detector for detecting, in response to a second enabling signal, a defect in a pattern contained within an image area of said microscope;

a first comparator for comparing at least a portion of an area imaged by said microscope with said reference image and for generating respective similarity values for each area portion;

a second comparator for comparing the similarity value of each of said area portions with a first threshold and generating said first enabling signal when said first threshold is exceeded;

a third comparator for comparing the similarity values of each of said area portions with a second threshold and generating said second enabling signal when said similarity value is below said second threshold.

32. The measuring system as in claim 31, wherein said first, second and third comparators are operative such that said first enabling signal is generated when said microscope is focused on a feature location having the most similarities, and said second enabling signal is generated when said microscope is focused on the feature location having the least similarities.

33. The measuring system as in claim 31, wherein said electron microscope is a scanning electron-beam microscope for scanning different locations on a single integrated circuit.

34. A critical dimension (CD) measurement apparatus for measuring critical dimensions of integrated circuit (IC) features during fabrication of semiconductor ICs on a silicon wafer, the measurement apparatus comprising:

a scanning electron-beam microscope (SEM) having at least;

a moveable stage supporting a silicon wafer during fabrication;

an electron beam gun, operatively coupled to said moveable stage, which emits a beam of electrons towards the silicon wafer;

a beam deflector, operatively coupled to said electron beam gun, which receives the emitted beam of electrons and directs the emitted beam of electrons across a portion of a surface of the silicon wafer covering a measurement site on the surface of the silicon wafer; and

a serial detector, operatively coupled to said moveable stage, wherein said serial detector operates to detect secondary electrons emitted from the silicon wafer, and to output a detection signal representative of the secondary electrons detected;

wherein, the CD measurement apparatus further comprises;

an image processor, operatively coupled to said serial detector, receiving the detection signal output by said serial detector, wherein said image processor generates a live image signal of the measurement site in response to the detection signal output by said serial detector;

an image memory, operatively coupled to said image processor, said image memory storing the live image generated by said image processor;

a display device, coupled to said image processor, which displays the live image stored in said image memory; and

a SEM computer having at least;

a central processing unit, operatively coupled to said image processor, wherein said central processing unit compares at least a portion of the live image in said image memory to a stored reference image and calculates a plurality of comparison scores based on similarities between respective portions of said live image and the stored reference image, wherein said central processing unit generates a measurement signal when at least one comparison score exceeds an upper threshold score, and generates an inspection signal when at least one comparison score is below a lower threshold score;

a critical dimension measurement unit, operatively coupled to said central processing unit, responsive to the measurement signal generated by said central processing unit to make CD measurements of features on the surface of the silicon wafer based on the detection signals output by said serial detector to determine presence of CD measurement defects in the silicon wafer;

a pattern inspection unit, operatively coupled to said central processing unit, responsive to the inspection signal generated by said central processing unit to inspect patterns corresponding to features on the surface of the silicon wafer based on the detection signal output by said serial detector, wherein said pattern inspection unit compares the inspection patterns from the surface of the silicon wafer to reference patterns stored in the database to determine presence of pattern defects in the silicon wafer; and

a SEM control unit, operatively coupled to said central processing unit, wherein said SEM control unit controls the moveable stage of said SEM to permit said SEM access to a plurality of measurement sites on the silicon wafer.

35. A method of detecting defects in the manufacture of an electronic device, the method comprising the steps of:

scanning a measurement site of the electronic device to produce a plurality of images associated with said measurement site;

comparing each of said images with a reference pattern and providing an indication of a degree of similarity of each of said images to said reference pattern;

performing a critical dimension measurement on an image which has a degree of similarity which exceeds a first threshold; and

performing a defect detection-operation on an image which has a degree of similarity which is below a second threshold.

36. The method as in claim 35, wherein said critical dimension measurement comprises the steps of:

performing a critical dimension measurement on predetermined features of said electronic device contained within said image which has a degree of similarity which exceeds said first threshold.

37. The method as in claim 35, wherein said defect detection operation comprising the steps of:

identifying the image which has a degree of similarity which is below said second threshold as representing a defective area of said electronic device.

38. The method as in claim 37, wherein the electronic device is a silicon wafer having a plurality of semiconductor integrated circuits, and wherein said comparing step includes a comparison between an image of a circuit element of one integrated circuit fabricated in the silicon wafer and a reference image of a corresponding circuit element from another integrated circuit.

39. A method of evaluating a semiconductor device, the method comprising the steps of:

scanning a plurality of locations of the semiconductor device;

outputting a plurality of image signals respectively corresponding to ones of the plurality of locations;

comparing each of the plurality of image signals with a stored reference image signal, and noting similarities relative to the stored reference image signal;

selecting one of the plurality of locations associated with the smallest number of similarities noted relative to the stored reference image signal;

storing a pattern error flag corresponding to the selected one of the plurality of locations on the semiconductor device;

determining which one of the plurality of locations is associated with the highest number of similarities relative to the stored reference image signal; and

measuring dimensions of the semiconductor device at the location determined in said determining step.

40. The method as in claim 39, wherein said step of scanning is performed using an optical microscope.

41. In a semiconductor integrated circuit manufacturing system, a critical dimension measurement (CD) process comprising the steps of:

scanning a surface of a semiconductor wafer and defining a measurement site on the surface of the semiconductor wafer;

generating an image signal associated with a topology of the semiconductor wafer at the measurement site;

storing an image of the measurement site;

comparing the stored image to a reference image and calculating a plurality of similarity scores based on similarities between portions of the stored image and the reference image; and

determining whether any of the comparison scores exceeds a first threshold score, wherein said determining step includes the step of performing an additional scan of the surface of said semi conductor wafer when none of the comparison scores exceeds the first threshold score,

performing a measurement process on an associated portion of the stored image when one of the comparison scores exceeds the first threshold score;

determining whether any of the comparison scores is below a second threshold score, and, when a comparison score is below the second threshold score, storing a defect indication in association with the portion of said stored image which has the comparison score below the second threshold score.

42. A critical dimension measurement process for measuring critical dimensions of integrated circuit (IC) features on a silicon wafer, the measurement process comprising the steps of:

placing a silicon wafer on a moveable stage;

emitting a beam of electrons;

scanning a surface of the silicon wafer by deflecting the beam of electrons obtained from said emitting step across a portion of the surface of the silicon wafer to define a first measurement site on the surface of the silicon wafer;

serially detecting secondary electrons emitted from the silicon wafer as a result of said scanning step;

storing in an image memory a live image of the measurement site of the surface of the silicon wafer corresponding to the secondary electrons detected in said serially detecting step;

comparing portions of the live image in the image memory to a stored reference image and calculating a plurality of comparison scores corresponding to said portions based on similarities between the portions of said live image and the stored reference image; and

determining whether at least one comparison score exceeds a predetermined upper threshold score, wherein said determining step includes the step of performing search and scanning process around said first measurement site when no comparison score exceeds the predetermined upper threshold score, and the step of performing a measurement process when at least one comparison score does exceed the predetermined upper threshold score;

wherein said additional search and scanning process includes the substep of;

storing an error code in a measurement site memory, and moving the stage to permit scanning of another measurement site in the vicinity of said first measurement site;

wherein said measurement process includes the substeps of;

determining placement of a critical dimension (CD) measurement window;

scanning the CD measurement window;

performing CD measurements on CD features on the surface of the silicon wafer within the CD measurement window;

storing measurement data resulting from performance of said performing CD measurements substep in the measurement site memory;

determining if any comparison scores fall below a predetermined lower threshold score; and

where any comparison score falls below the predetermined lower threshold score, capturing the portion of the live image having the comparison score below the predetermined lower threshold score and storing that portion of the live image, together with a defect flag in an inspection site memory.

43. The critical dimension measurement process as in claim 42,

wherein said additional search process further includes the substep of:

prior to said substep of storing an error code, retrieving a search count and determining whether said search count has exceeded a predetermined limit; and

where the count limit has not been exceeded, performing a search, incrementing the search count, and permitting additional scanning of said another measurement site;

wherein said substep of storing an error code further includes the substep of capturing and storing the live image in the measurement site memory.

44. The critical dimension measurement process as in claim 43, wherein said measurement process further includes the substeps of:

where no comparison score falls below the predetermined lower threshold score, capturing the live image and storing the live image in the measurement site memory.

45. A critical dimension measurement process for measuring critical dimensions of integrated circuit (IC) features during fabrication of semiconductor ICs on a silicon wafer, the measurement process comprising the steps of:

placing a silicon wafer on a moveable stage;

emitting a beam of electrons;

scanning a portion of the surface of the silicon wafer with a beam of electrons, said surface portion defining a measurement site;

serially detecting secondary electrons emitted from the silicon wafer as a result of said scanning step, thereby forming a live image of said measurement site;

storing said live image of the measurement site in an image memory;

comparing portions of said live image stored in the image memory with a stored reference image and calculating a plurality of comparison scores based on similarities between each compared portion of the live image and the stored reference image; and

determining whether at least one comparison score exceeds a predetermined upper threshold score, wherein said determining step includes the step of performing search and scanning process when no comparison score exceeds the predetermined upper threshold score, and the step of performing a measurement process when any comparison score does exceed the predetermined upper threshold score;

wherein said additional search and scanning process includes the substeps of;

evaluating whether any comparison score falls below a predetermined lower threshold score;

where at least one comparison score does fall below the predetermined lower threshold score, capturing the live image and storing the live image, together with a defect flag in an inspection site memory, and storing an error code in a measurement site memory, and moving the stage to permit scanning of another measurement site;

wherein said measurement process includes the substeps of;

determining placement of a critical dimension (CD) measurement window;

scanning the CD measurement window;

performing CD measurements on CD features on the surface of the silicon wafer within the CD measurement window; and

storing measurement data resulting from said performing CD measurements substep in the measurement site memory.

46. The critical dimension measurement process of claim 45,

wherein said additional search process further includes the substeps of:

where no comparison score falls below the predetermined lower threshold score, storing an error code in a measurement site memory, and moving the stage to permit scanning of another measurement site.

47. The critical dimension measurement process of claim 45,

wherein said additional search process further includes the substep of:

where no comparison score falls below the predetermined lower threshold score, retrieving a search count and determining whether a count limit has been reached;

where the count limit has not been reached, performing a search, incrementing the search count, and conducting additional scanning around the measurement site in said scanning step; and

upon determining that the count limit has been reached, storing an error code and the live image in the measurement site memory.

48. The critical dimension measurement process of claim 47,

wherein said additional search process further includes the substep of:

after the error code is stored upon determining that the count limit had been reached, capturing and storing the live image in the measurement site memory.