Externally excited torroidal plasma source using a gas distribution plate

• US 6,453,842 B1
• Filed: 08/11/2000
• Issued: 09/24/2002
• Est. Priority Date: 08/11/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tanaka, Tsutomu, Ye, Yan, Ramaswamy, Kartik, Hanawa, Hiroji, Nguyen, Andrew, Collins, Kenneth S
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/636,700
• Time in Patent Office: 774 Days
• Field of Search: 156/345.35, 156/345.48, 156/345.49, 118/723.IR, 118/723.I, 118/723.ER, 118/723.F, 118/723.AN, 315/111.51, 315/111.71, 315/111.21
• US Class Current: 118/723.00I
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

Claims

1. A plasma chamber defining an evacuated interior environment for processing a substrate, said chamber comprising:

a substrate support;

an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, said gas distribution plate and substrate support defining a substrate processing region therebetween;

a hollow re-entrant conduit having respective ends opening into said substrate processing region on opposite sides of said gas distribution plate, with the interior of said conduit sharing the interior environment;

said conduit being adapted to accept irradiation of processing gases within the conduit by an RF field to sustain a plasma current in a closed recirculating path extending along a length of the conduit interior and across the substrate processing region within said chamber interior environment, said plasma current flowing principally in a single direction from one end of said conduit to an opposite end of said conduit and making a complete circuit by passing through said substrate processing region, said direction being periodically reversed at a frequency of said RF field.

2. The plasma chamber of claim 1 wherein the diameter of the conduit ends are substantially greater than the diameter of the substrate support.

3. The plasma chamber of claim 1 wherein the plasma ion density is substantially uniform across the substrate support.

4. The plasma chamber of claim 1 wherein the conduit includes an insulating gap generally midway between said respective ends to preclude the conduit from presenting a continuous conductive path between said ends.

5. The plasma chamber of claim 1 wherein the inner diameter of the conduit ends is at least as great as the diameter of the substrate support.

6. The plasma chamber of claim 1 wherein each end of said conduit has a transverse dimension which is at least as great as that of said substrate support.

7. The plasma chamber of claim 1 further comprising an RF power applicator.

8. The plasma chamber of claim 7 wherein said applicator comprises an RF inductive source.

9. The plasma chamber of claim 8 wherein said inductive source is adjacent said conduit.

10. The plasma chamber of claim 1 further comprising an RF bias power source coupled to said substrate support.

11. The plasma chamber of claim 1 further comprising a gas injection inlet in said conduit.