Silicon on III-V semiconductor bonding for monolithic optoelectronic integration
First Claim
1. A method for bonding a silicon substrate to a III-V material substrate, comprising the steps of:
- contacting the silicon substrate together with the III-V material substrate;
annealing the contacted substrates at a first temperature above ambient temperature; and
thinning only the silicon substrate.
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Abstract
In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g., at a temperature of between about 150° C. and about 350° C. The silicon substrate is then thinned. This bonding process enables the fabrication of thick, strain-sensitive and defect-sensitive optoelectronic devices on the optimum substrate for such, namely, a thick III-V material substrate, while enabling the fabrication of silicon electronic devices in a thin silicon layer, resulting from the thinned Si substrate, that is sufficient for such fabrication but which has been thinned to eliminate thermally-induced stress in both the Si and III-V materials. The III-V material substrate thickness thereby provides the physical strength of the composite substrate structure, while the thinned silicon substrate minimizes stress in the composite structure.
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Citations
27 Claims
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1. A method for bonding a silicon substrate to a III-V material substrate, comprising the steps of:
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contacting the silicon substrate together with the III-V material substrate;
annealing the contacted substrates at a first temperature above ambient temperature; and
thinning only the silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification