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Silicon on III-V semiconductor bonding for monolithic optoelectronic integration

  • US 6,455,398 B1
  • Filed: 07/14/2000
  • Issued: 09/24/2002
  • Est. Priority Date: 07/16/1999
  • Status: Expired due to Fees
First Claim
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1. A method for bonding a silicon substrate to a III-V material substrate, comprising the steps of:

  • contacting the silicon substrate together with the III-V material substrate;

    annealing the contacted substrates at a first temperature above ambient temperature; and

    thinning only the silicon substrate.

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