Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
First Claim
1. A method of fabricating an integrated circuit comprising the steps of:
- (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate to provide a substantially uniform coating of said silane-coupling agent on said substrate;
(b) heating said substrate containing said coating of said silane-coupling agent at a temperature of about 90°
C. or above to provide a modified surface layer to said substrate containing Si—
O bonds, said modified surface layer having a greater water contact angle than a non-heated substrate containing a coating of said silane-coupling agent;
(c) rinsing said heated substrate with a suitable solvent that is effective in removing any unreacted silane-coupling agent to provide a modified surface that is substantially free of particular matter; and
(d) applying a dielectric material to said rinsed surface containing said Si—
O.
3 Assignments
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Accused Products
Abstract
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si—O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si—O bonds.
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Citations
22 Claims
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1. A method of fabricating an integrated circuit comprising the steps of:
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(a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate to provide a substantially uniform coating of said silane-coupling agent on said substrate;
(b) heating said substrate containing said coating of said silane-coupling agent at a temperature of about 90°
C. or above to provide a modified surface layer to said substrate containing Si—
O bonds, said modified surface layer having a greater water contact angle than a non-heated substrate containing a coating of said silane-coupling agent;
(c) rinsing said heated substrate with a suitable solvent that is effective in removing any unreacted silane-coupling agent to provide a modified surface that is substantially free of particular matter; and
(d) applying a dielectric material to said rinsed surface containing said Si—
O.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
wherein X is a polymerizable group selected from alkenes, vinyl and alkynes;
R1 and R2 are the same or different and are H, alkyl, alkoxy, alkylester, alkenyl, alkynyl, aryl, cycloalkyl;
R3 is alkyl or a —
C(O)R4 radical wherein R4 is alkyl;
a and b are the same or different and are 0, 1 or 2, and y is from 1-3, with the proviso that the sum of a+b+y is 3.
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5. The method of claim 4 wherein said silane-coupling agent is an alkoxysilane.
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6. The method of claim 5 wherein said alkoxysilane is selected from the group consisting of vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, allyltrimethoxysilane, vinyldiphenylethoxysilane, norborenyltriethoxysilane and trivinyltriethoxysilane.
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7. The method of claim 1 wherein said silane-coupling agent is vinyltriacetoxysilane.
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8. The method of claim 1 wherein said silane-coupling agent is applied as a concentrated solution.
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9. The method of claim 8 wherein said silane-coupling agent is present in said concentrated solution in a concentration of about 0.10% or higher.
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10. The method of claim 9 wherein said silane-coupling agent is present in a concentration of from about 0.2% to about 5.0%.
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11. The method of claim 10 wherein said silane-coupling agent is present in a concentration of about 2.5%.
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12. The method of claim 1 wherein said silane-coupling agent is be applied to the substrate by spin-on deposition, spray coating, dip coating, brushing, evaporation, or dissolution.
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13. The method of claim 1 wherein step (b) is carried out for a time period of about 10 seconds or above.
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14. The method of claim 1 wherein step (b) is carried out at a temperature of from about 90°
- C. to about 200°
C. for a time period of from about 10 to about 300 seconds.
- C. to about 200°
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15. The method of claim 1 wherein step (b) is carried out in an inert gas atmosphere.
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16. The method of claim 1 wherein said solvent in step (c) is propylene glycol monomethyl ether acetate.
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17. The method of claim 1 wherein an optional baking step is conducted after step (c), but prior to step (d).
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18. The method of claim 1 wherein said dielectric material has a dielectric constant of about 3.8. or below.
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19. The method of claim 1 wherein step (d) includes spin-on coating, chemical solution deposition, chemical vapor deposition (CVD), plasma-assisted CVD, evaporation, and dip coating.
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20. The method of claim 1 wherein said dielectric material is a polyimide;
- a Si-containing polymer, a benzocyclobutene;
a polynorborane;
a polyarylene ether, a thermostatic polyarylene ether, an aromatic thermosetting resin;
a parylene copolymer;
parylene-F;
polynapthalane;
polytetrafluoronaphthalene;
poly(octafluoro-bis-benzocyclobutene);
Telfon-AF;
fluorinated amorphous carbon;
a Xerogel or a nanoporous silica.
- a Si-containing polymer, a benzocyclobutene;
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21. The method of claim 1 wherein said dielectric material is methylsilsesquixoane (MSSQ), hydridosilsequixoane or an aromatic thermosetting resin.
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22. The method of claim 1 wherein processing steps (a)-(d) are repeated any number of times to provide a multi-level interconnect structure.
Specification