Selective operation of a multi-state non-volatile memory system in a binary mode
First Claim
1. A method of controllably operating a plurality of blocks of nonvolatile memory cells in either at least four threshold level states or exactly two threshold level states, wherein said at least four threshold level states are spaced apart across a memory cell operating threshold window and said exactly two threshold level states are those of the four threshold level states that are maximally separated from each other within the operating threshold window.
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Abstract
A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby providing an increased margin during two state operation. This allows faster programming and a longer operational life of the memory cells being operated in two states when it is more desirable to have these advantages than the increased density of data storage that multi-state operation provides.
1184 Citations
12 Claims
- 1. A method of controllably operating a plurality of blocks of nonvolatile memory cells in either at least four threshold level states or exactly two threshold level states, wherein said at least four threshold level states are spaced apart across a memory cell operating threshold window and said exactly two threshold level states are those of the four threshold level states that are maximally separated from each other within the operating threshold window.
- 5. In a memory system having a plurality of blocks of non-volatile memory cells that individually stores more than one bit of data in one of at least four threshold level states that are spaced apart across an operating threshold window, a method of operating the memory system comprising storing one bit of data in the memory cells of at least one of the blocks in only two of said at least four threshold level states that are furthest displaced from each other within the operating threshold window.
- 9. In a flash non-volatile memory system with memory cells connected in a NAND arrangement, wherein at least two bits are normally programmed into individual ones of the memory cells from at least two different pages of data, a method of programming only one bit into some of the system'"'"'s memory cells comprising programming one bit from one of said at least two pages into individual ones of said some of the system'"'"'s memory cells in the same manner as when normally programmed as one of two bits but without programming the second bit from the other of said at least two pages.
Specification