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Gallium nitride type semiconductor laser device

  • US 6,456,640 B1
  • Filed: 01/21/1999
  • Issued: 09/24/2002
  • Est. Priority Date: 01/26/1998
  • Status: Expired due to Term
First Claim
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1. A gallium nitride type semiconductor laser device, comprising:

  • a substrate; and

    a layered structure formed on the substrate, the layered structure at least including an active layer of a nitride type semiconductor material which is interposed between a pair of nitride type semiconductor layers each functioning as a cladding layer or a guide layer, wherein a current is injected into a stripe region in the layered structure having a width smaller than a width of the active layer, and the width of the stripe region is in a range between about 0.2 μ

    m and about 1.8 μ

    m.

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