Method of fabricating a micro-technical structure, and micro-technical component

• US 6,458,603 B1
• Filed: 10/10/2001
• Issued: 10/01/2002
• Est. Priority Date: 10/10/2000
• Status: Expired due to Fees

• Current Assignee: Qimonda AG (Infineon Technologies AG)
• Original Assignee: Infineon Technologies AG
• Inventors: Wendt, Hermann, Schwarzl, Siegfried, Miethaner, Stefan, Kersch, Alfred
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Schillinger, Laura
• Application Number:
  US09/974,938
• Publication Number:
  US 20020042158A1
• Time in Patent Office: 356 Days
• Field of Search: 438/3, 438/48, 438/104, 438/179, 438/286, 257/295, 257/310, 257/9, 428/694, 428/432, 428/469, 428/472, 428/702, 365/173, 365/171
• US Class Current: 438/3
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

The invention relates to a method for fabricating in particular a TMR element for use in a MRAM, wherein a mask is arranged on a substrate and structured in such a manner that it shadows but does not cover a surface region of the substrate, and wherein material of the structure which is to be fabricated is then deposited on the substrate in a directed deposition process. The invention also relates to a component with a micro-technical structure which has been fabricated in this manner.

Claims

1. A method of fabricating a micro-technical structure, which comprises the following steps:

providing a substrate with a surface;

forming a structured shadow mask on the surface of the substrate, and defining on the surface an uncovered surface region not covered by the mask and a shadow region shadowed but not covered by the mask; and

depositing material through the mask in a directed deposition process and forming the micro-technical structure on the uncovered surface region of the substrate not covered by the mask.

2. The method according to claim 1, which comprises depositing materials to form a ferromagnetic structure for an MRAM.

3. The method according to claim 1, wherein the forming step comprises arranging and structuring the mask such that a first part of the mask covers a surface region of the substrate and a second part of the mask forms an overhang which is supported against the substrate by the first part and which defines the shadow region.

4. The method according to claim 3, wherein the forming step comprises initially depositing a first mask layer on the substrate and depositing a second mask layer on the first mask layer, and structuring the mask by removing the second mask layer and the first mask layer in defined regions and isotropically etching to remove additional material of the first mask layer between the second mask layer and the substrate.

5. The method according to claim 1, wherein the shadow region forms a continuous encircling margin around the uncovered surface region not shadowed by the mask on which the micro-technical structure is produced.

6. The method according to claim 1, which further comprises, after the step of forming the micro-technical structure, covering at least one of the shadow region of the substrate and a surface of the micro-technical structure with a filler material.

7. The method according to claim 6, which comprises forming a planar surface by removing part of the mask and part of the filler material.

8. The method according to claim 1, wherein the depositing step comprises forming the micro-technical structure by depositing a plurality of layers one above the other on the substrate.

9. The method according to claim 8, which comprises forming a layer on a previously applied layer of the structure, and fabricating the layers in deposition processes with different angular distributions of the material being deposited.