Method of fabricating high efficiency light-emitting diode with a transparent substrate
First Claim
1. A method of fabricating a high efficiency light-emitting diode, comprising the steps of:
- forming a first type ohmic contact layer on a semiconductor substrate;
forming a double heterostructure on said first type ohmic contact layer wherein said double heterostructure having a first type cladding layer, an undoped active layer and a second type cladding layer;
forming a second type ohmic contact layer on said second type cladding layer;
adhering a transparent subtrate to said second type ohmic contact layer;
performing an etching step to remove said semiconductor substrate;
etching said first type cladding layer and said undoped active layer by using said second type ohmic contact layer as an etching stopper;
forming a first electrode on said first type ohmic contact layer; and
forming a second electrode on said second type ohmic contact layer.
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Abstract
A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED. Moreover, the absorption of visible light of the GaAs substrate can be significantly improved by decreasing the use of the GaAs material.
36 Citations
20 Claims
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1. A method of fabricating a high efficiency light-emitting diode, comprising the steps of:
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forming a first type ohmic contact layer on a semiconductor substrate;
forming a double heterostructure on said first type ohmic contact layer wherein said double heterostructure having a first type cladding layer, an undoped active layer and a second type cladding layer;
forming a second type ohmic contact layer on said second type cladding layer;
adhering a transparent subtrate to said second type ohmic contact layer;
performing an etching step to remove said semiconductor substrate;
etching said first type cladding layer and said undoped active layer by using said second type ohmic contact layer as an etching stopper;
forming a first electrode on said first type ohmic contact layer; and
forming a second electrode on said second type ohmic contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a high efficiency light-emitting diode, comprising the steps of:
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sequentially forming a first type ohmic contact layer and a double heterostructure on a semiconductor substrate wherein said double heterostructure having a first type cladding layer, an undoped active layer and a second type cladding layer;
forming a second type ohmic contact layer on said second type cladding layer;
forming a transparent substrate on said second ohmic contact layer by hot-adhering technique;
roughing said transparent substrate to acquire a rugged surface;
performing an etching step to remove said semiconductor substrate;
etching said first type cladding layer and said undoped active layer by using said second type ohmic contact layer as an etching stopper;
forming a first electrode on said first type ohmic contact layer; and
forming a second electrode on said second type ohmic contact layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification