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Opto-electronic integrated circuit

  • US 6,458,614 B1
  • Filed: 03/19/1999
  • Issued: 10/01/2002
  • Est. Priority Date: 03/26/1998
  • Status: Expired due to Term
First Claim
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1. A method of forming an optical electronic integrated circuit, comprising the steps of:

  • providing a silicon substrate including an electronic circuit for processing an electric signal;

    forming a ZnO layer on at least a portion of the silicon substrate; and

    forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and

    wherein the GaN-based semiconductor compound layer is formed at a temperature of 800°

    C. or lower; and

    further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.

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