Opto-electronic integrated circuit

• US 6,458,614 B1
• Filed: 03/19/1999
• Issued: 10/01/2002
• Est. Priority Date: 03/26/1998
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Kadota, Michio, Nanishi, Yasushi
• Primary Examiner(s): Pham, Long
• Application Number:
  US09/272,703
• Time in Patent Office: 1,292 Days
• Field of Search: 438/22, 438/24, 438/29, 438/30, 438/31, 438/46
• US Class Current: 438/31
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 31/1035 the devices comprising active layers formed only by AIIIBV compounds
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0261 Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.

Claims

1. A method of forming an optical electronic integrated circuit, comprising the steps of:

providing a silicon substrate including an electronic circuit for processing an electric signal;

forming a ZnO layer on at least a portion of the silicon substrate; and

forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and

wherein the GaN-based semiconductor compound layer is formed at a temperature of 800°

C. or lower; and

further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.

2. A method of forming an optical electronic integrated circuit according to claim 1, further comprising the step of forming a SiO₂ layer between the silicon substrate and the ZnO layer, and wherein the ZnO film is optically connected to the optical circuit so as to act as an optical waveguide.

3. A method of forming an optical electronic integrated circuit according to claim 2, wherein the silicon substrate includes a MOSFET and wherein the ZnO layer is initially formed so as to cover that portion of the silicon substrate which includes the MOSFET and is thereafter eliminated from said portion.

4. A method of forming an optical electronic integrated circuit according to claim 2, wherein the silicon substrate includes a MOSFET and wherein the ZnO layer is initially formed so as to cover that portion of the silicon substrate which includes the MOSFET and is thereafter eliminated from said portion.

5. A method according to claim 1, wherein the GaN-based semiconductor compound layer is formed by the ECR-MBE method.

6. A method according to claim 1, wherein the GaN-based semiconductor compound layer is Ga₁₋

xIn_xN, Ga<sub>1−

x</sub>Al_xN, Ga<sub>1−

x</sub>B_xN or a mixed crystal thereof.

7. A method according to claim 1, wherein the electronic circuit comprises at least one MOSFET.

8. A method according to claim 1, wherein the optical circuit includes at least one member selected from the group consisting of a light emitting diode, a laser and a photodiode.

9. A method according to claim 1, wherein the ZnO layer does not cover the electronic circuit.

10. A method according to claim 1, wherein the ZnO layer covers the electronic circuit.

11. A method of forming an optical electronic integrated circuit, comprising the steps of:

providing a silicon substrate including an electronic circuit for processing an electric signal;

forming a ZnO layer on at least a portion of the silicon substrate; and

forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and

further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.

12. A method according to claim 11, wherein the GaN-based semiconductor compound layer is Ga₁₋

xIn_xN, Ga<sub>1−

x</sub>Al_xN, G<sub>1−

x</sub>B_xN or a mixed crystal thereof.

13. A method according to claim 11, wherein the electronic circuit comprises at least one MOSFET.

14. A method according to claim 11, wherein the optical circuit includes at least one member selected from the group consisting of a light emitting diode, a laser and a photodiode.

15. A method according to claim 11, wherein the ZnO layer does not cover the electronic circuit.

16. A method according to claim 11, wherein the ZnO layer covers the electronic circuit.

17. A method of forming an optical electronic integrated circuit according to claim 11, further comprising the step of forming a SiO₂ layer between the silicon substrate and the ZnO layer, and wherein the ZnO film is optically connected to the optical circuit so as to act as an optical waveguide.

18. A method of forming an optical electronic integrated circuit, comprising the steps of:

providing a silicon substrate including an electronic circuit for processing an electric signal;

forming a ZnO layer on at least a portion of the silicon substrate; and

forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and

wherein the GaN-based semiconductor compound layer is formed by the ECR-MBE method; and

further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.

19. A method of forming an optical electronic integrated circuit according to claim 18, further comprising the step of forming a SiO₂ layer between the silicon substrate and the ZnO layer, and wherein the ZnO film is optically connected to the optical circuit so as to act as an optical waveguide.