Opto-electronic integrated circuit
First Claim
Patent Images
1. A method of forming an optical electronic integrated circuit, comprising the steps of:
- providing a silicon substrate including an electronic circuit for processing an electric signal;
forming a ZnO layer on at least a portion of the silicon substrate; and
forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and
wherein the GaN-based semiconductor compound layer is formed at a temperature of 800°
C. or lower; and
further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.
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Abstract
An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.
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Citations
19 Claims
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1. A method of forming an optical electronic integrated circuit, comprising the steps of:
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providing a silicon substrate including an electronic circuit for processing an electric signal;
forming a ZnO layer on at least a portion of the silicon substrate; and
forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and
wherein the GaN-based semiconductor compound layer is formed at a temperature of 800°
C. or lower; and
further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming an optical electronic integrated circuit, comprising the steps of:
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providing a silicon substrate including an electronic circuit for processing an electric signal;
forming a ZnO layer on at least a portion of the silicon substrate; and
forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and
further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method of forming an optical electronic integrated circuit, comprising the steps of:
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providing a silicon substrate including an electronic circuit for processing an electric signal;
forming a ZnO layer on at least a portion of the silicon substrate; and
forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal; and
wherein the GaN-based semiconductor compound layer is formed by the ECR-MBE method; and
further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide. - View Dependent Claims (19)
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Specification