Semiconductor device and method for producing the same

• US 6,458,620 B1
• Filed: 10/18/2001
• Issued: 10/01/2002
• Est. Priority Date: 11/19/1998
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Matsuda, Kenichi
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): RICHARDS, NORMAN DREW
• Application Number:
  US09/982,717
• Publication Number:
  US 20020025597A1
• Time in Patent Office: 348 Days
• Field of Search: 438/57, 438/69, 438/72, 438/78, 438/71, 438/98
• US Class Current: 438/78
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors
• CPC Class Codes: H01L 31/022416 comprising ring electrodes
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion. The light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.

Claims

1. A method for producing a photo-detecting device comprising the steps of:

growing a light absorption layer and a window layer on a semiconductor substrate in this order;

forming an island-like diffusion region in the window layer by diffusing an impurity therein;

depositing a lower metal film on a portion of the window layer excluding the island-like diffusion region;

depositing an insulative film on the window layer and the lower metal film;

forming an opening over the island-like diffusion region by partially etching away the insulative film;

depositing and lifting off a thin metal film so as to simultaneously form a negative electrode, a pad, wiring, and an upper metal film.

2. A method for producing a photo-detecting device according to claim 1, wherein the lower metal film is a lamination film comprising Cr, Pt, and Au.