Reticles for charged-particle-beam microlithography that exhibit reduced warp at pattern-defining regions, and semiconductor-device-fabrication methods using same

• US 6,459,090 B1
• Filed: 07/21/2000
• Issued: 10/01/2002
• Est. Priority Date: 07/23/1999
• Status: Expired due to Fees

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Suzuki, Yoshihiko
• Primary Examiner(s): Nguyen, Kiet T.
• Application Number:
  US09/620,764
• Time in Patent Office: 802 Days
• Field of Search: 250/492.2, 250/492.22, 250/492.23, 250/505.1, 430/5, 430/296
• US Class Current: 250/492.23
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: H01J 2237/0453 multiple apertures
• CPC Class Codes: H01J 2237/31794 affecting masks

Abstract

Reticles and reticle blanks are disclosed for performing charged-particle-beam (CPB) microlithography. The reticles typically include a rigid peripheral frame attached to a reticle portion. Such attachment can cause warping, and thus deformation, of the reticle portion. To reduce such warp, the reticle portion comprises an inner supporting part (surrounding a pattern-defining region) surrounded by an outer supporting part. Situated between the inner and outer supporting parts are multiple connecting structures. The connecting structures can have spring characteristics that collectively absorb warp. Alternatively, the connecting structures can include respective driving mechanisms. The driving mechanisms are especially adapted to cause, when electrically activated, local electrostatic attraction between a respective first conductive region (located on the outer supporting part) and a respective second conductive region (located on the inner supporting part). Selective energization of the connecting structures causes micro movement of inner supporting part (and thus the pattern-defining region) relative to the outer supporting part, thereby canceling reticle warp.

Claims

1. A reticle for charged-particle-beam (CPB) microlithography, comprising a reticle portion, the reticle portion comprising:

a pattern-defining region comprising multiple subfields separated from one another by support struts, in which struts no pattern elements are defined, and each subfield defining a respective portion of a pattern defined by the reticle;

an inner supporting part peripherally attached to the pattern-defining region, the inner supporting part being configured so as to integrally support the pattern-defining region; and

an outer supporting part surrounding the inner supporting part and being connected to the inner supporting part by multiple connecting structures each having a spring characteristic, the outer supporting part being configured so as to peripherally support the inner supporting part and pattern-defining region.

2. The reticle of claim 1, wherein the pattern-defining region is configured as a stencil reticle in which pattern elements are defined as respective voids in a CPB-scattering reticle membrane.

3. The reticle of claim 1, wherein the pattern-defining region is configured as a scattering-membrane reticle in which pattern elements are defined as respective spaces between CPB-scattering bodies situated on a CPB-transmissive reticle membrane.

4. The reticle of claim 1, wherein:

each connecting structure has an H-shaped configuration having two pairs of H-ends; and

a first pair of H-ends is connected to the inner supporting part and a second pair of H-ends is connected to the outer supporting part.

5. The reticle of claim 1, wherein:

each connecting structure has an X-shaped configuration having two pairs of X-ends; and

a first pair of X-ends is connected to the inner supporting part and a second pair of X-ends is connected to the outer supporting part.

6. The reticle of claim 1, comprising a number (n) of connecting structures each satisfying a relationship nK_f=K_s/β

, wherein K_s is an in-plane elastomeric constant of the reticle portion, β

is a connection-relaxation coefficient of the connecting structure, and K_f is a spring constant of the connecting structure.

7. The reticle of claim 1, further comprising a peripheral frame peripherally attached to the reticle portion.

8. A reticle for charged-particle-beam (CPB) microlithography, comprising a reticle portion, the reticle portion comprising:

a pattern-defining region comprising multiple subfields separated from one another by support struts, each subfield defining a respective portion of a pattern defined by the reticle;

an inner supporting part peripherally attached to the pattern-defining region, the inner supporting part being configured so as to integrally support the pattern-defining region;

an outer supporting part peripherally surrounding;

the inner supporting part;

multiple connecting structures connecting the inner supporting part to the outer supporting part, each connecting structure comprising a first conductive region situated on the inner supporting part, at least the first conductive regions being selectively energizable electrically so as to selectively cause the respective second conductive regions to move relative to the respective first conductive regions, thereby displacing the pattern-defining region so as to at least partially cancel a warp;

of the pattern-defining region.

9. The reticle of claim 8, wherein, in each connecting structure, the first and second conductive regions exhibit electrostatic attraction with respect to each other under appropriate conditions of electrical energization of at least the respective first conductive region.

10. The reticle of claim 8, further comprising a peripheral frame peripherally attached to the outer supporting part.

11. The reticle of claim 10, wherein the peripheral frame comprises a conductive pad from which a wiring connection is made to a respective first conductive region.

12. The reticle of claim 8, wherein:

each of the first conductive regions comprises a first flexible membrane member connected to the outer supporting part;

each of the second conductive regions comprises a second flexible membrane member connected to the inner supporting part; and

each connecting structure further comprises an insulating member situated between the respective first and second flexible membrane members.

13. A charged-particle-beam (CPB) microlithography apparatus, comprising:

an illumination-optical system situated and configured to irradiate a charged-particle illumination beam onto a selected region of a reticle as recited in claim 8;

a reticle stage situated and configured to (i) hold the reticle as the reticle is being illuminated by the illumination beam, and (ii) selectively energize the conductive regions so as to reduce reticle warp;

a projection-optical system situated and configured to receive a patterned beam, formed by passage of the illumination beam through the reticle and carrying an image of the irradiated region of the reticle, and to focus the image onto a predetermined position on a sensitive substrate; and

a substrate stage situated and configured to hold the substrate as the substrate is being exposed by the patterned beam.

14. A method for microlithographically exposing a pattern onto a sensitive substrate using a charged particle beam, comprising:

providing a reticle comprising (i) a pattern-defining region comprising multiple subfields each defining a respective portion of a pattern defined by the reticle, (ii) an inner supporting part peripherally attached to the pattern-defining region and configured so as to integrally support the pattern-defining region, (iii) an outer supporting part peripherally surrounding the inner supporting part, and (iv) multiple connecting structures connecting the inner supporting part to the outer supporting part, each connecting structure comprising a first conductive region situated on the outer supporting part and a second conductive region situated on the inner supporting part;

selectively energizing one or more of at least the first conductive regions electrically so as to selectively cause the respective second conductive regions to move relative to the respective first conductive regions, thereby displacing the pattern-defining region so as to at least partially cancel a warp of the pattern-defining region; and

selective irradiating the charged particle beam onto the subfields in an ordered manner to transfer the reticle pattern to the substrate.

15. A semiconductor-fabrication process, comprising the steps of:

(a) preparing a wafer;

(b) processing the wafer; and

(c) assembling devices on the wafer during steps (a) and (b), wherein step (b) comprises a method for microlithographically exposing a pattern, as recited in claim 14.

16. A semiconductor device produced by the method of claim 15.