Vertical geometry ingan LED
First Claim
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1. A vertical geometry light emitting diode that is capable of emitting light in a color selected from the group consisting of the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum, said light emitting diode comprising:
- an n-type silicon carbide substrate;
an n-type conductive buffer layer on said substrate;
a first n-type layer of gallium nitride on said conductive buffer layer ;
a second layer of undoped gallium nitride on said first gallium nitride layer;
an indium gallium nitride quantum well on said second gallium nitride layer;
a third layer of undoped gallium nitride on said quantum well;
a first layer of undoped aluminum gallium nitride on third gallium nitride layer;
a second layer of p-type aluminum gallium nitride layer on said first aluminum gallium nitride layer;
a fourth p-type gallium nitride layer on said second aluminum gallium nitride layer;
an ohmic contact to said substrate; and
an ohmic contact to said gallium nitride layer.
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Abstract
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.
212 Citations
9 Claims
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1. A vertical geometry light emitting diode that is capable of emitting light in a color selected from the group consisting of the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum, said light emitting diode comprising:
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an n-type silicon carbide substrate;
an n-type conductive buffer layer on said substrate;
a first n-type layer of gallium nitride on said conductive buffer layer ;
a second layer of undoped gallium nitride on said first gallium nitride layer;
an indium gallium nitride quantum well on said second gallium nitride layer;
a third layer of undoped gallium nitride on said quantum well;
a first layer of undoped aluminum gallium nitride on third gallium nitride layer;
a second layer of p-type aluminum gallium nitride layer on said first aluminum gallium nitride layer;
a fourth p-type gallium nitride layer on said second aluminum gallium nitride layer;
an ohmic contact to said substrate; and
an ohmic contact to said gallium nitride layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification
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Current AssigneeCREE Incorporated (Wolfspeed, Inc.)
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsEdmond, John Adam, Slater, David B. Jr., Doverspike, Kathleen Marie, Kong, Hua-shuang, Dieringer, Heidi Marie
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Primary Examiner(s)Jackson, Jr., Jerome
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Application NumberUS09/154,363Publication NumberTime in Patent Office1,476 DaysField of Search257/97, 257/103US Class Current257/97CPC Class CodesH01L 33/0025 comprising only AIIIBV comp...H01L 33/007 comprising nitride compoundsH01L 33/12 with a stress relaxation st...H01L 33/32 containing nitrogen
