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Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics

  • US 6,459,103 B1
  • Filed: 01/26/2000
  • Issued: 10/01/2002
  • Est. Priority Date: 01/10/2000
  • Status: Expired due to Term
First Claim
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1. A heterojunction bipolar transistor with topee-shaped negative-differential-resistance characteristics comprising:

  • a substrate;

    a sub-collector layer located on the surface of the substrate;

    a collector control layer located on the surface of the sub-collector layer;

    a base control layer located on the surface of the collector control layer and with a setback layer;

    an emitter control layer located on the surface of the base control layer and with a δ

    -doped sheet; and

    an ohmic contract layer located on the surface of the emitter control layer.

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