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Semiconductor storage element

  • US 6,459,110 B1
  • Filed: 06/08/2000
  • Issued: 10/01/2002
  • Est. Priority Date: 07/30/1999
  • Status: Expired due to Fees
First Claim
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1. A memory cell comprising:

  • a ferroelectric capacitor;

    a selection transistor;

    a control transistor;

    a sense amplifier coupled to a first main electrode of the control transistor; and

    a read line coupled to a second main electrode of the control transistor, wherein one electrode of said ferroelectric capacitor is connected with a first main electrode of said selection transistor, the other electrode of said ferroelectric capacitor is connected with a plate line which is different from the read line, and a second main electrode of said selection transistor is connected with a control electrode of said control transistor.

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