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Gate protection clamping circuits and techniques with controlled output discharge current

  • US 6,459,321 B1
  • Filed: 06/28/2001
  • Issued: 10/01/2002
  • Est. Priority Date: 06/28/2001
  • Status: Expired due to Term
First Claim
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1. A method of clamping the gate to source voltage of a FET during discharge of the FET in order to prevent oxide breakdown, the FET having a gate coupled to an output capacitor, the gate to source capacitance of the FET and the capacitance of the output capacitor forming an output capacitance, the method comprising:

  • discharging the FET using a drive current until the FET is OFF;

    when the FET is OFF, providing a feedback signal to reduce the drive current by at least an order of magnitude;

    when the drive current is reduced, discharging the output capacitance using the drive current wherein the gate to source voltage of the FET is clamped at a pre-determined value.

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