On-chip transformers
First Claim
1. A structure in a semiconductor chip, said structure comprising:
- a dielectric area having a first permeability;
a permeability conversion material having a second permeability, said permeability conversion material being interspersed within said dielectric area, wherein said second permeability is greater than said first permeability;
a first conductor patterned into said dielectric area, said first conductor having a first plurality of turns;
a second conductor patterned into said dielectric area, said second conductor having a second plurality of turns.
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Accused Products
Abstract
In an exemplary embodiment of the disclosed transformer, the transformer comprises a dielectric area. For example, the dielectric area can consist of three different dielectric layers. Also, by way of example, the dielectric area can comprise silicon dioxide or a low-k dielectric. According to the exemplary embodiment, the dielectric area is interspersed with a permeability conversion material. The permeability conversion material has a permeability higher than the permeability of the dielectric area. For example, the permeability conversion material can be nickel, iron, nickel-iron alloy, or magnetic oxide. The exemplary embodiment further comprises a first conductor and also a second conductor patterned into the dielectric area. The first and/or the second conductor can comprise copper, aluminum, or a copper-aluminum alloy. Each of the first and second conductors are made up of a number of turns which result in, respectively, the primary and secondary windings of the exemplary disclosed transformer.
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Citations
19 Claims
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1. A structure in a semiconductor chip, said structure comprising:
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a dielectric area having a first permeability;
a permeability conversion material having a second permeability, said permeability conversion material being interspersed within said dielectric area, wherein said second permeability is greater than said first permeability;
a first conductor patterned into said dielectric area, said first conductor having a first plurality of turns;
a second conductor patterned into said dielectric area, said second conductor having a second plurality of turns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure in a semiconductor chip, said structure comprising:
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a first dielectric layer;
a second dielectric layer situated over said first dielectric layer, said second dielectric layer being interspersed with a permeability conversion material;
a third dielectric layer situated over said second dielectric layer;
a primary winding patterned into said first, second, and third dielectric layers;
a second winding patterned into said first, second, and third dielectric layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification