Sputtering targets and method for the preparation thereof
First Claim
1. A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2 having an electrical resistivity of less than 0.5 ohm·
- cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiOx which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.
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Abstract
A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2 having an electrical resistivity of less than 0.5 ohm·cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiOx, which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.
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Citations
12 Claims
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1. A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2 having an electrical resistivity of less than 0.5 ohm·
- cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiOx which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A process for the preparation of sub-stoichiometric titanium dioxide, TiOx, where x is below 2 having an electrical resistivity of less than 0.1 ohm·
- cm which process comprises subjecting titanium dioxide to a plasma treatment in an atmosphere which is oxygen deficient and which does not contain any oxygen-containing compounds.
- View Dependent Claims (11, 12)
Specification