Schottky device
First Claim
1. A semiconductor device having improved forward voltage drop and reverse leakage current characteristics, the device comprising:
- a low resistivity layer of semiconductor material having a first conductivity type and having first and second low resistivity layer surfaces;
a high resistivity layer of semiconductor material having the first conductivity type and having first and second high resistivity layer surfaces, the first high resistivity layer surface being contiguous with the first low resistivity surface;
a dopant region buried in the high resistivity layer; and
a barrier metal formed on the second high resistivity layer surface.
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Accused Products
Abstract
An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N+ material while the high resistivity layer can be an N− layer. The buried dopant region can be of P+ material, thus forming a PN junction with an associated charge depletion zone in the N− layer and an associated low reverse leakage current. The location of the P+ material allows for a full Schottky barrier between the N− material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.
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Citations
28 Claims
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1. A semiconductor device having improved forward voltage drop and reverse leakage current characteristics, the device comprising:
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a low resistivity layer of semiconductor material having a first conductivity type and having first and second low resistivity layer surfaces;
a high resistivity layer of semiconductor material having the first conductivity type and having first and second high resistivity layer surfaces, the first high resistivity layer surface being contiguous with the first low resistivity surface;
a dopant region buried in the high resistivity layer; and
a barrier metal formed on the second high resistivity layer surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A layer of a Schottky device, the layer comprising:
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a region of a first conductivity type; and
a volume of a second conductivity type encapsulating the region. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A semiconductor device comprising:
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a first layer of semiconductor material of a first conductivity type, the first layer of semiconductor material having a first side and a second side;
a region of semiconductor material of a region conductivity type, positioned such that the first layer of semiconductor material surrounds the region of semiconductor material; and
a second layer of semiconductor material of a second conductivity type, the second layer of semiconductor material having opposing first and second sides, wherein the first opposing side is adjacent to the first side of the first layer of semiconductor material. - View Dependent Claims (25, 26, 27, 28)
a barrier metal adjacent to the second side of the first layer of semiconductor material and forming a Schottky junction with the first layer of semiconductor material.
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28. The semiconductor device as claimed in claim 27 in which the forward voltage drop at a current density of 157 amperes/cm2 does not exceed approximately 305 millivolts and the reverse leakage current does not exceed approximately 180 microamperes at 30 volts reverse bias.
Specification