Semiconductor device having improved heat radiation

• US 6,462,418 B2
• Filed: 03/16/2001
• Issued: 10/08/2002
• Est. Priority Date: 09/06/2000
• Status: Expired due to Term

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Sakamoto, Noriaki, Kobayashi, Yoshiyuki, Sakamoto, Junji, Okada, Yukio, Igarashi, Yusuke, Maehara, Eiju, Takahashi, Kouji
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Tran, Long K.
• Application Number:
  US09/809,849
• Publication Number:
  US 20020027290A1
• Time in Patent Office: 571 Days
• Field of Search: 257/687, 257/768, 257/666, 257/659, 257/660, 257/428, 257/681, 257/668, 438/238, 438/118, 438/783, 438/628, 438/644, 438/654, 438/57
• US Class Current: 257/753
• CPC Class Codes: H01L 21/4828 Etching etching for cleaning without patterning H01L21/4835
• CPC Class Codes: H01L 21/4832 Etching a temporary substrate after encapsulation process to form leads
• CPC Class Codes: H01L 2221/68377 with parts of the auxiliary support remaining in the finished device
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32057 in side view
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/078 : Adhesive characteristics other than chemical
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.

Claims

1. A semiconductor device, comprising:

at least an electrode for radiation having front and back faces;

a plurality of bonding pads each having front and back faces, said plurality of bonding pads provided to surround said electrode for radiation, and said plurality of bonding pads are separated from said electrode for radiation by isolation trench;

an insulating adhesion means adhered on the front face of said electrode for radiation and filled in the isolation trench, said insulating adhesion means integrally supports said plurality of bonding pads and said electrode for radiation;

a semiconductor chip fixed on the front face of said electrode for radiation and the isolation trench by said insulating adhesion means and electrically connected to said plurality of bonding pads;

a connecting means connecting bonding electrodes of said semiconductor chip and said plurality of bonding pads; and

an insulating resin sealing said semiconductor chip so as to expose said back faces of said plurality of bonding pads, said back face of said electrode for radiation and said insulating adhesion means.

2. A semiconductor device according to claim 1, wherein said insulating adhesion means selected from the group consisting of an adhesion sheet or an adhesive.

3. A semiconductor device according to claim 1, wherein said semiconductor chip is mounted face-up and said plurality of bonding pads and said bonding electrode are connected with a bonding wire.

4. A semiconductor device according to claim 1, wherein said connection means selected from the group consisting of a bonding wire or brazing material.

5. A semiconductor device according to claim 1, wherein side electrode for radiation and said plurality of bonding pads are formed from a common conductive foil.

6. A semiconductor device according to claim 1, wherein the isolation trench is formed by etching, and side faces of electrode for radiation and said plurality of bonding pads have curved structures.

7. A semiconductor device according to claim 1, further comprising external connection electrodes provided on said back face of said electrode for radiation and said back face of said plurality of bonding pads, wherein each of said external connection electrodes have substantially the same size.