RF power amplifier circuitry and method for amplifying signals
First Claim
1. A direct drive RF power amplifier comprising:
- an input stage; and
a push-pull amplifier coupled to the input stage, wherein the push-pull amplifier has first and second transistors driven by capacitively coupled first and second inductors; and
a capacitor that capacitively couples the first and second inductors.
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Accused Products
Abstract
An RF power amplifier is provided for use with wireless transmission systems such as cellular phones. An RF power amplifier includes direct drive amplifier circuitry operating in a push-pull scheme. The RF power amplifier includes a pair of switching devices driven by a pair of mutually coupled inductive devices. The inductive devices may be magnetically or capacitively coupled together. The RF power amplifier may be formed on a single integrated circuit and include an on-chip bypass capacitor. The RF power amplifier may utilize a voltage regulator for providing a regulated voltage source. The RF power amplifier may be provided using a dual oxide gate device resulting in an improved amplifier. The RF power amplifier may be packaged using flip chip technology and multi-layer ceramic chip carrier technology.
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Citations
37 Claims
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1. A direct drive RF power amplifier comprising:
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an input stage; and
a push-pull amplifier coupled to the input stage, wherein the push-pull amplifier has first and second transistors driven by capacitively coupled first and second inductors; and
a capacitor that capacitively couples the first and second inductors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An RF power amplifier for providing an amplified RF signal to an output node comprising:
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a first switching device connected between a first power supply node and the output node;
a second switching device connected between a second power supply node and the output node;
a first reactive circuit connected between the first power supply node and a gate of the first switching device;
a second reactive circuit connected between the second power supply node and a gate of the second switching device; and
a third switching device connected between the second power supply node and the gate of the first switching device, said third switching device having a gate coupled to an RF input signal. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of amplifying RF signals comprising the steps of:
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providing a first switching device connected between an output node and a voltage source;
providing a second switching device connected between the output node and ground;
connecting a first inductor between the voltage sourced and a gate of the first switching device;
connecting a second inductor between ground and a gate of the second switching device;
providing a third switching device connected between ground and the gate of the second switching device.
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30. An RF power amplifier for providing an amplified RF signal to an output node comprising:
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a first switching device having a gate and first and second outputs, wherein the first output of the first switching device is connected to an output node;
a second switching device having a gate and first and second outputs, wherein the first output of the second switching device is connected to the output node;
a first inductor connected between the gate and the second output of the first switching device for driving the first switching device;
a second inductor connected between the gate and the second output of the second switching device for driving the second switching device; and
a third switching device connected between ground and the gate of the first switching device, wherein the third switching device has a gate coupled to an RF input signal. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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Specification