Tunable high Tc superconductive microwave devices

• US 6,463,308 B1
• Filed: 12/11/1997
• Issued: 10/08/2002
• Est. Priority Date: 06/13/1995
• Status: Expired due to Fees

• Current Assignee: Telefonaktiebolaget LM Ericsson
• Original Assignee: Telefonaktiebolaget LM Ericsson
• Inventors: Gevorgian, Spartak, Wikborg, Erland, Vendik, Orest, Kollberg, Erik
• Primary Examiner(s): Lee, Benny T.
• Application Number:
  US08/989,166
• Time in Patent Office: 1,762 Days
• Field of Search: 333/995, 333/219, 333/202, 333/205, 333/204, 505/210, 505/700, 505/701, 505/866
• US Class Current: 505/210
• CPC Class Codes: H01P 1/2086 multimode
• CPC Class Codes: H01P 7/10 Dielectric resonators

Abstract

A tunable microwave device has a substrate of a dielectric material which has a variable dielectric constant. At least one superconducting film is arranged on at least parts of the dielectric substrate. The dielectric substrate includes a non-linear dielectric bulk material.

Claims

1. Tunable microwave device comprising a first dielectric substrate including a dielectric material having a variable dielectric constant and a non-linear dielectric single crystal bulk material;

a first superconducting film and a second superconducting film directly disposed on opposing surfaces of the first dielectric substrate such that a parallel plate resonator is provided, wherein the first dielectric substrate comprises a resonant disk having a cylindrical or rectangular shape, and

a respective conducting layer is arranged on each of the first and second superconducting films on a side of each of the respective first and second superconducting films that is opposite the corresponding surface of the first dielectric substrate.

2. Device according to claim 1, wherein the first and second superconducting films comprise a high temperature superconducting (HTS) material.

3. Device according to claim 2, wherein the first dielectric material has low dielectric losses and high dielectric constants at cryogenic temperatures.

4. Device of claim 1, wherein the second superconducting film has an area at least slightly smaller than a corresponding area of the dielectric substrate on which the second superconducting films is arranged to provide coupling between degenerate modes resulting in a dual mode operation resonator.

5. Device according to claim 1, wherein a thin buffer layer is arranged between superconducting film and the first dielectric substrate.

6. Device according to claim 1, wherein the respective conducting layers comprise non-superconducting metal.

7. Device according to claim 1, wherein a thickness of at least one of the first and second superconducting films exceeds the London penetration depth (λ

_L).

8. Device according to claim 1, wherein the device is electrically tunable.

9. Device according to claim 8, wherein the dielectric constant of the dielectric material is varied by application of a voltage to the first and second superconducting films.

10. Device according to claim 1, wherein the device is thermally tunable meaning that the dielectric constant is changed when the temperature is changed.

11. Device according to claim 1, wherein a thin buffer layer is arranged between the second superconducting film and the dielectric substrate.

12. Device of claim 1, wherein:

a second dielectric substrate is arranged on a side of the first superconducting film that is opposite the first dielectric substrate,

a third dielectric substrate is arranged on a side of the second superconducting film that is opposite the first dielectric substrate, and

the first and second superconducting films are arranged in such a way that coupling is provided between first, second, and third dielectric substrates to provide a multimode resonator.

13. Device of claim 1, wherein the first superconducting film has an area at least slightly smaller than a corresponding area of the dielectric substrate on which the first superconducting films is arranged to provide coupling between degenerate modes resulting in a dual mode operation resonator.

14. Device according to claim 13, further comprising means for controlling the coupling between at least two of the degenerate modes associated with the first and second superconducting films thereby realizing at least a two-pole tunable passband filter.

15. Device of claim 1, wherein the device is enclosed in a cavity.

16. Device according to claim 15, wherein the cavity is a below cut-off frequency waveguide.

17. Device according to claim 15, wherein the cavity is superconducting comprising either bulk superconducting material or non-superconducting material covered by a superconducting film.

18. Device according to claim 17, wherein coupling means are provided for coupling micro-wave signals into or out of the cavity.

19. Device according to claim 17, further comprising means for fine-tuning or calibrating the resonant frequency of the resonator.

20. Device according to claim 19, wherein the second means comprises at least one of a mechanically adjustable arrangement and a thermal adjusting means, within the cavity.

21. Device according to claim 15, wherein the cavity comprises two sub-cavities either in the form of separate cavities or a divided cavity, each subcavity with at least one resonator, and the resonators are connected to each other via interconnecting means thereby defining a multiple filter.

22. Device according to claim 1, wherein the dielectric substrate comprises SrTiO3 and at least one of the first and second superconducting films comprises YBCO.

23. Device according to claim 1, wherein the shape and size of the dielectric substrate, the first superconducting film, and the second superconducting film are substantially the same.

24. Tunable microwave resonator comprising a dielectric substrate and a first superconducting film arranged on a first surface of the dielectric substrate and a second superconducting film arranged on a second surface of the dielectric substrate, the second surface of the first substrate being opposite the first surface, first tuning means connecting to one or more of the first superconducting film or the second superconducting film, the dielectric substrate comprising a non-linear bulk material, wherein the first superconducting film, the second superconducting film and the dielectric substrate define a parallel plate resonator and, on those sides of the first and second superconducting films that are opposite to the first substrate, non-superconducting layers are arranged.

25. Tunable microwave resonator according to claim 24 comprising at least two modes associated therewith to realize at least a dual mode resonator.

26. Tunable microwave resonator according to claim 24, wherein second tuning means are provided for fine tuning or adjusting the resonant frequency of the resonator.

27. Tunable microwave filter comprising at least one resonator arranged in a cavity, each of the at least one resonators comprising a dielectric substrate, on which a superconducting film arrangement is provided on at least two surfaces, and first tuning means connecting to at least part of the superconducting arrangement for changing the dielectric constant (∈

) of the dielectric substrate, wherein;

the superconducting films are directly disposed on the dielectric substrate of each resonator,

the at least one resonators comprise a parallel-plate resonator,

conducting layers are arranged on respective superconducting films on the sides of the superconducting films opposite to the dielectric substrate,

the dielectric substrate is formed by a non-linear bulk material, and

coupling means are provided between at least two of the at least one resonators.

28. A tunable microwave device, comprising:

a substrate comprised of a dielectric material having a variable dielectric constant and including a non-linear dielectric single crystal bulk material;

a first superconducting film disposed on a first side of the substrate;

a second superconducting film disposed on a second side of the substrate opposite the first side, such that a parallel plate resonator is provided;

a first conducting layer disposed on the first superconducting film; and

a second conducting layer disposed on the second superconducting film, wherein the substrate includes a resonant disk having either a cylindrical or rectangular shape, and the dielectric material has low dielectric losses and high dielectric constants at cryogenic temperatures.