Substrate changing-over mechanism in a vaccum tank

• US 6,463,678 B2
• Filed: 02/14/2001
• Issued: 10/15/2002
• Est. Priority Date: 08/29/1990
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Itou, Atsushi, Tsubone, Tsunehiko, Kato, Shigekazu, Nishihata, Kouji
• Primary Examiner(s): O MALLEY, KATHRYN S
• Application Number:
  US09/782,194
• Publication Number:
  US 20010009076A1
• Time in Patent Office: 608 Days
• Field of Search: 344/06, 344/09, 344/13, 344/17, 345/26, 345/27, 345/73, 34/61, 342/07, 342/09, 342/17, 342/36, 134/84, 134/85, 134/902, 118/723.R, 118/723.MW, 118/729, 118/730, 414/939, 414/940, 414/217, 414/222.13, 156/345, 156/345.C, 156/345.PC, 438/906, 438/907
• US Class Current: 34/573
• CPC Class Codes: B01J 3/006 Processes utilising sub-atmospheric pressure; Apparatus therefor
• CPC Class Codes: B41J 2/36 Print density control
• CPC Class Codes: B41J 2/365 by compensation for variation in temperature
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67736 Loading to or unloading from a conveyor
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece
• CPC Class Codes: Y10S 134/902 Semiconductor wafer
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber
• CPC Class Codes: Y10S 414/14 Wafer cassette transporting

Abstract

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Claims

1. A vacuum processing system having at least one vacuum processing chamber for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a controller for controlling a wafer processing mode and a cleaning mode of said at least one vacuum processing chamber, said cleaning mode being interposed between wafer processing modes after processing a predetermined number of wafers from said cassette in said wafer processing mode.

2. A vacuum processing system having at least one vacuum processing chamber for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a controller for controlling a wafer processing mode and a cleaning mode of said at least one vacuum processing chamber, with operation of said at least one vacuum processing chamber in said cleaning mode after finishing said wafer processing mode for a predetermined number of wafers in said cassette.

3. A vacuum processing system having a plurality of vacuum processing chambers for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a controller for controlling said vacuum processing chambers so that at least one of said vacuum processing chambers is in a mode of wafer processing and with at least another one of said vacuum processing chambers being in a mode of plasma cleaning at a same time.

4. A vacuum processing system having a plurality of vacuum processing chambers for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a detector for detecting a cleaning timing of each of said vacuum processing chambers under modes of processing; and

a cleaning mechanism responsive to an output of said detector, for executing plasma cleaning in said vacuum processing chambers detected by said detector to need cleaning.

5. A vacuum processing system according to claim 4, wherein said detector generates an output when a predetermined number of said wafers have been treated in a same vacuum processing chamber.

6. A vacuum processing system according to claim 4, wherein said detector generates an output when all wafers in said cassette have been treated in a same vacuum processing chamber.

7. A vacuum processing system having a plurality of vacuum processing chambers for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a controller for controlling said vacuum processing chambers so that said vacuum processing chambers are plasma cleaned in a predetermined order.

8. A vacuum processing system having a plurality of vacuum processing chambers for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a controller for controlling said vacuum processing chambers so that they are plasma cleaned in a predetermined order, while skipping the cleaning of vacuum processing chambers which do not need to be plasma cleaned.

9. A vacuum processing system having a plurality of vacuum processing chambers for processing a wafer which is transferred thereto from a cassette in an atmospheric condition, comprising:

a detector for detecting, in each of said vacuum processing chambers, a generation of a condition requiring a plasma cleaning of a vacuum processing chamber; and

a controller connected to said detector for controlling said vacuum processing chambers so that the vacuum processing chambers, detected by said detector to require said plasma cleaning, are in a mode of said plasma cleaning, while the vacuum processing chambers not detected, by said detector, to require said plasma cleaning, are not in a mode of plasma cleaning.