Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies

• US 6,464,824 B1
• Filed: 08/31/1999
• Issued: 10/15/2002
• Est. Priority Date: 08/31/1999
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Kramer, Stephen J., Hofmann, James J., Sabde, Gundu M., Joslyn, Michael James
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Zervigon, Rudy
• Application Number:
  US09/386,648
• Time in Patent Office: 1,141 Days
• Field of Search: 451/5, 451/1, 451/8, 451/10, 451/41, 451/285, 451/56, 438/14, 438/692, 438/761, 438/795, 324/671, 216/86, 216/27
• US Class Current: 156/345.16
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 49/16 taking regard of the load
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time. The work versus time plot is then integrated to determine an estimated work exerted at the pad/substrate interface. The planarizing process is terminated when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly according to a predetermined relationship between work and substrate assembly thickness.

Claims

1. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector being attached to one side-wall of the cavity or the end section of the shaft;

pressing a substrate assembly against a planarizing surface of the polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector at periodic intervals and generating a plot of measured drag force values versus time;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

2. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector being attached to one side-wall of the cavity or the end section of the shaft;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating total work includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

3. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate assembly moveable with respect to the base in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to the primary plate assembly to sense lateral displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter indicative of drag force comprises sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work at the pad/substrate interface; and

terminating removal of material from the substrate assembly when the estimated work at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

4. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate assembly moveable with respect to the base in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to the primary plate assembly to sense lateral displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work exerted at the pad/substrate interface by measuring drag force between the substrate assembly and the pad at periodic intervals and integrating the product of the measured drag force and the relative velocity over time; and

terminating removal of material from the substrate assembly when the estimated work exerted at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

5. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table to support the polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector being attached to one side-wall of the cavity or the end section of the shaft;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating total work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

6. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to a side-wall of the cavity;

pressing a substrate assembly against a planarizing surface of the polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector and generating a plot of measured drag force values versus time;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

7. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to the end section of the shaft;

pressing a substrate assembly against a planarizing surface of the polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

8. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate movably attached to the base to move in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector contacting a stop surface of the base extending transverse to a planarizing surface and a contact surface of the primary plate adjacent to the stop surface;

pressing a substrate assembly against the planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

9. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate assembly moveable with respect to the base in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to the primary plate assembly to sense lateral displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

pressing a substrate assembly against a planarizing surface of the polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

10. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a post, a carrier head to hold the substrate assembly, and a force detector coupled to the post to sense displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

pressing a substrate assembly against a planarizing surface of the polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

11. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to at least one of the posts to detect deflection of the posts corresponding to the lateral displacement between the primary plate and the base;

pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

12. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to allow lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector between a stop surface of the base extending transverse to the planarizing surface and a contact surface of the primary plate adjacent to the stop surface to detect the lateral drag forces;

pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;

moving the substrate assembly relative to the polishing pad to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;

determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;

correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.

13. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to a side-wall of the cavity;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

14. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table to support a polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to the end section of the shaft;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

15. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate movably attached to the base to move in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector contacting a stop surface of the base extending transverse to the planarizing surface and a contact surface of the primary plate adjacent to the stop surface;

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed at the pad/substrate interface includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

16. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate assembly moveable with respect to the base in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to the primary plate assembly to sense lateral displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed at the pad/substrate interface includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

17. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a post, a carrier head to hold the substrate assembly, and a force detector coupled to the post to sense displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

18. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to at least one of the posts to detect deflection of the posts corresponding to the lateral displacement between the primary plate and the base;

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

19. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to allow lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector between a stop surface of the base extending transverse to the planarizing surface and a contact surface of the primary plate adjacent to the stop surface to detect the lateral drag forces;

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly, wherein estimating work performed includes measuring the lateral forces between the substrate assembly and the pad with the force detector and determining an area under a line defined by a lateral force versus time plot; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

20. A method of planarizing a microelectronic substrate assembly, comprising:

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a predetermined relationship between work and substrate thickness by measuring drag force between the substrate assembly and the polishing pad, including measuring an actual thickness of the substrate assembly corresponding to each measured drag force to create work/thickness data points, and performing a mathematical regression of the data points to generate a straight-line association between work at the pad/substrate interface and thickness of the substrate assembly;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to the predetermined relationship between work and change in substrate assembly thickness.

21. A method of planarizing a microelectronic substrate assembly, comprising:

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining the predetermined relationship between work and substrate thickness by measuring drag force between the substrate assembly and the polishing pad, including measuring an actual thickness of the substrate assembly corresponding to each measured drag force to create work/thickness data points, and performing a mathematical regression of the data points to generate a straight-line association between work at the pad/substrate interface and thickness of the substrate assembly;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness, further comprising;

correlating the estimated work with the straight line relationship to ascertain an estimated thickness of the substrate assembly; and

disengaging the substrate assembly from the polishing pad when the estimated thickness of the substrate assembly is within a desired endpoint range.

22. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a post, a carrier head to hold the substrate assembly, and a force detector coupled to the post to sense displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work at the pad/substrate interface; and

terminating removal of material from the substrate assembly when the estimated work at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

23. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to at least one of the posts to detect deflection of the posts corresponding to the lateral displacement between the primary plate and the base;

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work at the pad/substrate interface; and

terminating removal of material from the substrate assembly when the estimated work at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

24. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a post, a carrier head to hold the substrate assembly, and a force detector coupled to the post to sense displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, a polishing pad being removably attached to the primary plate;

removing material from a substrate assembly using the polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work exerted at the pad/substrate interface by measuring drag force between the substrate assembly and the pad at periodic intervals and integrating the product of the measured drag force and the relative velocity over time; and

terminating removal of material from the substrate assembly when the estimated work exerted at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

25. A method of planarizing a microelectronic substrate assembly, comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to at least one of the posts to detect deflection of the posts corresponding to the lateral displacement between the primary plate and the base;

removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;

determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating work exerted at the pad/substrate interface by measuring drag force between the substrate assembly and the pad at periodic intervals and integrating the product of the measured drag force and the relative velocity over time; and

terminating removal of material from the substrate assembly when the estimated work exerted at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.

26. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table to support the polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to a side-wall of the cavity;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

27. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table to support the polishing pad, a carrier head and a force detector, the carrier head including a chuck having a bottom section including a substrate holder facing the pad, a top section including a cavity having a side-wall, a pivoting joint in the cavity, and a shaft having an end section received in the cavity and attached to the pivoting joint, and the force detector comprising a pressure sensitive ring attached to the end section of the shaft;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

28. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table including a base and a primary plate movably attached to the base to move in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector contacting a stop surface of the base extending transverse to the planarizing surface and a contact surface of the primary plate adjacent to the stop surface;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

29. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table including a base and a primary plate assembly moveable with respect to the base in a lateral motion corresponding to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to the primary plate assembly to sense lateral displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, the polishing pad being removably attached to the primary plate;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

30. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a post, a carrier head to hold the substrate assembly, and a force detector coupled to the post to sense displacement between the base and the primary plate corresponding to the lateral forces between the base and the primary plate, the polishing pad being removably attached to the primary plate;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter indicative of drag force comprises sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

31. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector coupled to at least one of the posts to detect deflection of the posts corresponding to the lateral displacement between the primary plate and the base;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

32. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

providing a planarizing machine having a table including a base and a primary plate attached to the base by a plurality of flexible posts that deflect to provide at least limited lateral displacement between the primary plate and the base in correspondence to the lateral drag forces, a carrier head to hold the substrate assembly, and a force detector contacting a stop surface of the base extending transverse to the planarizing surface and a contact surface of the primary plate adjacent to the stop surface to detect the lateral drag forces;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time, wherein measuring the parameter includes sensing the lateral forces between the substrate assembly and the pad with the force detector;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.

33. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

determining the predetermined relationship between work and substrate thickness by measuring drag force between the substrate assembly and the polishing pad, measuring an actual thickness of the substrate assembly corresponding to each measured drag force to create work/thickness data points, and performing a mathematical regression of the data points to generate a straight-line association between work at the pad/substrate interface and thickness of the substrate assembly;

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time;

determining a predetermined relationship between work and substrate thickness by measuring drag force between the substrate assembly and the polishing pad, measuring an actual thickness of the substrate assembly corresponding to each measured drag force to create work/thickness data points, and performing a mathematical regression of the data points to generate a straight-line association between work at the pad/substrate interface and thickness of the substrate assembly;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to the predetermined relationship between work and change in substrate assembly thickness.

34. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:

measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time;

estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and

terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness, wherein terminating removal of material from the substrate assembly further comprises;

determining the predetermined relationship between work and substrate thickness by measuring drag force between the substrate assembly and the polishing pad, measuring an actual thickness of the substrate assembly corresponding to each measured drag force to create work/thickness data points, and performing a mathematical regression of the data points to generate a straight-line association between work at the pad/substrate interface and thickness of the substrate assembly;

correlating the estimated work with the straight line relationship to determine ascertain an estimated thickness of the substrate assembly; and

disengaging the substrate assembly from the polishing pad when the estimated thickness of the substrate assembly is within a desired endpoint range.