Contamination controlling method and apparatus for a plasma processing chamber
First Claim
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1. A method of processing a substrate and reducing metal and/or particle contamination thereof comprising steps of:
- (a) placing a substrate on a substrate holder in a processing chamber, the processing chamber including at least one member having an exposed surface adjacent the substrate, the member comprising a silicon carbide based material;
(b) processing the substrate by supplying process gas to the processing chamber and energizing the process gas into a plasma state in the processing chamber, the silicon carbide member being exposed to the plasma and providing a ground path for RF current sustaining the plasma;
(c) removing the substrate from the processing chamber; and
(d) consecutively processing additional substrates in the processing chamber by repeating steps (a-c) while minimizing particle contamination of the substrates during the processing step as a result of reduction of plasma potential on the silicon carbide member and/or reduced sputtering of non-silicon carbide chamber interior surfaces, the silicon carbide member comprising a liner inside the processing chamber and forming a sidewall of the processing chamber, and the liner being a separate piece attached to an electrically grounded part of the chamber providing electrical grounding of the liner.
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Abstract
A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
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Citations
28 Claims
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1. A method of processing a substrate and reducing metal and/or particle contamination thereof comprising steps of:
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(a) placing a substrate on a substrate holder in a processing chamber, the processing chamber including at least one member having an exposed surface adjacent the substrate, the member comprising a silicon carbide based material;
(b) processing the substrate by supplying process gas to the processing chamber and energizing the process gas into a plasma state in the processing chamber, the silicon carbide member being exposed to the plasma and providing a ground path for RF current sustaining the plasma;
(c) removing the substrate from the processing chamber; and
(d) consecutively processing additional substrates in the processing chamber by repeating steps (a-c) while minimizing particle contamination of the substrates during the processing step as a result of reduction of plasma potential on the silicon carbide member and/or reduced sputtering of non-silicon carbide chamber interior surfaces, the silicon carbide member comprising a liner inside the processing chamber and forming a sidewall of the processing chamber, and the liner being a separate piece attached to an electrically grounded part of the chamber providing electrical grounding of the liner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A plasma processing chamber comprising:
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a substrate holder for supporting a substrate within an interior of the processing chamber;
at least one member having an exposed surface adjacent the substrate, the member comprising a silicon carbide based material having a density of at least 3.1 g/cm3 and including at least 99 wt % carbon and silicon, the member comprising a liner inside the processing chamber and forming a sidewall of the processing chamber wherein the liner is a separate piece attached to an electrically grounded part of the chamber providing electrical grounding of the liner;
a gas supply supplying process gas to the interior of the processing chamber; and
an energy source supplying energy into the interior of the processing chamber and energizing the process gas into a plasma state for processing a substrate, the silicon carbide member minimizing particle contamination of substrates during plasma processing thereof as a result of reduction of plasma potential on the silicon carbide member and/or reduced sputtering of non-silicon carbide chamber interior surfaces. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A plasma processing chamber comprising:
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a substrate holder for supporting a substrate within an interior of the processing chamber;
at least one member having an exposed surface adjacent the substrate, the member comprising a silicon carbide based material having a density of at least 3.1 g/cm3 and including at least 99 wt % carbon and silicon, the member comprising a liner inside the processing chamber and forming a sidewall of the processing chamber wherein the liner is a separate piece attached to an electrically grounded part of the chamber providing electrical grounding of the liner;
a gas supply supplying process gas to the interior of the processing chamber; and
an energy source comprising an antenna supplying energy into the interior of the processing chamber, the antenna supplying the energy through a substantially planar dielectric window, and energizing the process gas into a plasma state for processing a substrate, the silicon carbide member minimizing particle contamination of substrates during plasma processing thereof as a result of reduction of plasma potential on the silicon carbide member and/or reduced sputtering of non-silicon carbide chamber interior surfaces.
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Specification