Semiconductor light emitting device
First Claim
1. A semiconductor light emitting device, comprising:
- a GaAs substrate whose principal plane is inclined from a (100) plane in a <
011>
orientation;
a first buffer layer of AlxGa1−
xAs (0≦
x≦
1) provided on the principal plane of the GaAs substrate;
a second buffer layer of AlyGazIn1−
y−
zP (0≦
y≦
1 and 0≦
z≦
1) provided on the first buffer layer;
a first cladding layer of AlsGatIn1−
s−
tP (0≦
s≦
1 and 0≦
t≦
1) provided on and contacting the second buffer layer;
an active layer provided on the first cladding layer; and
a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer, and wherein the first cladding layer and the second buffer layer are of the same composition type.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
-
Citations
17 Claims
-
1. A semiconductor light emitting device, comprising:
-
a GaAs substrate whose principal plane is inclined from a (100) plane in a <
011>
orientation;
a first buffer layer of AlxGa1−
xAs (0≦
x≦
1) provided on the principal plane of the GaAs substrate;
a second buffer layer of AlyGazIn1−
y−
zP (0≦
y≦
1 and 0≦
z≦
1) provided on the first buffer layer;
a first cladding layer of AlsGatIn1−
s−
tP (0≦
s≦
1 and 0≦
t≦
1) provided on and contacting the second buffer layer;
an active layer provided on the first cladding layer; and
a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer, and wherein the first cladding layer and the second buffer layer are of the same composition type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor light emitting device, comprising:
-
a GaAs substrate whose principal plane is inclined from a (100) plane in a <
011>
orientation;
a first buffer layer of AlxGa1−
xAs (0≦
x≦
1) provided on the principal plane of the GaAs substrate and contacting the substrate;
a second buffer layer of AlyGazIn1−
y−
zP (0≦
y≦
1 and 0≦
z≦
1) provided on the first buffer layer so as to contact the first buffer layer;
a first cladding layer of AlsGatIn1−
s−
tP (0≦
s≦
1 and 0≦
t≦
1) provided on the second buffer layer so as to contact the second buffer layer;
an active layer provided on the first cladding layer; and
a second cladding layer provided on the active layer, wherein each of the first cladding layer and the second buffer layer include Al, and an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
-
-
17. A semiconductor light emitting device, comprising:
-
a substrate comprising GaAs whose principal plane is inclined from a (100) plane in a <
011>
orientation;
a first buffer layer provided on the substrate;
a second buffer layer comprising AlyGazIn1−
y−
zP (0≦
y≦
1 and 0≦
z≦
1) provided on the first buffer layer;
a first cladding layer comprising AlsGatIn1−
s−
tP (0≦
s≦
1 and 0≦
t≦
1) provided on the second buffer layer;
an active layer provided on the first cladding layer; and
a second cladding layer provided over the active layer, wherein each of the first cladding layer and the second buffer layer include Al, and an Al content of the first cladding layer is larger than an Al content of the second buffer layer, and wherein the second buffer layer contacts each of the first buffer layer and the first cladding layer.
-
Specification