Semiconductor light emitting device

• US 6,465,812 B1
• Filed: 09/27/2000
• Issued: 10/15/2002
• Est. Priority Date: 09/27/1999
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Nakamura, Junichi, Nakatsu, Hiroshi, Murakami, Tetsuroh, Sasaki, Kazuaki, Kurahashi, Takahisa, Hosoba, Hiroyuki
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US09/671,777
• Time in Patent Office: 748 Days
• Field of Search: 257/190, 257/97, 257/98, 257/103, 372/45
• US Class Current: 257/103
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of Al_xGa_1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of Al_yGa_xIn_1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of Al_aGa_tIn_1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.

Claims

1. A semiconductor light emitting device, comprising:

a GaAs substrate whose principal plane is inclined from a (100) plane in a <

011>

orientation;

a first buffer layer of Al_xGa<sub>1−

x</sub>As (0≦

x≦

1) provided on the principal plane of the GaAs substrate;

a second buffer layer of Al_yGa_zIn<sub>1−

y−

z</sub>P (0≦

y≦

1 and 0≦

z≦

1) provided on the first buffer layer;

a first cladding layer of Al_sGa_tIn<sub>1−

s−

t</sub>P (0≦

s≦

1 and 0≦

t≦

1) provided on and contacting the second buffer layer;

an active layer provided on the first cladding layer; and

a second cladding layer provided on the active layer, wherein

an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer, and wherein the first cladding layer and the second buffer layer are of the same composition type.

2. A semiconductor light emitting device according to claim 1, wherein the principal plane of the GaAs substrate is inclined from the (100) plane toward the [011] orientation by an angle equal to or greater than about 2°

.

3. A semiconductor light emitting device according to claim 1, wherein the Al content y of the second buffer layer is equal to or greater than about 0.3 and less than or equal to about 0.8.

4. A semiconductor light emitting device according to claim 1, wherein a growth temperature for the second buffer layer is different from that for the first cladding layer.

5. A semiconductor light emitting device according to claim 1, wherein a growth temperature for the second buffer layer is equal to that for the first cladding layer.

6. A semiconductor light emitting device according to claim 1, wherein a growth temperature for the first buffer layer is equal to that for the second buffer layer.

7. A semiconductor light emitting device according to claim 1, wherein the second buffer layer is grown while changing a growth temperature therefor in a stepwise or continuous manner.

8. A semiconductor light emitting device according to claim 1, wherein the first cladding layer is grown while changing a growth temperature therefor in a stepwise or continuous manner.

9. A semiconductor light emitting device according to claim 1, further comprising a current diffusing layer on the second cladding layer.

10. A semiconductor light emitting device according to claim 9, further comprising a current blocking layer between the second cladding layer and the current diffusing layer.

11. A semiconductor light emitting device according to claim 10, wherein the current blocking layer is provided in a central portion of the semiconductor light emitting device.

12. A semiconductor light emitting device according to claim 10, wherein the current blocking layer is provided in a peripheral portion of the semiconductor light emitting device.

13. A semiconductor light emitting device according to claim 1, wherein the active layer is a quantum well active layer obtained by depositing a number of quantum well layers and a number of barrier layers in an alternating pattern.

14. A semiconductor light emitting device according to claim 1, further comprising a current blocking layer provided on the second cladding layer and a cap layer provided on the current blocking layer.

15. A semiconductor light emitting device according to claim 1, further comprising a light reflecting layer provided closer to the GaAs substrate with respect to the first cladding layer.

16. A semiconductor light emitting device, comprising:

a GaAs substrate whose principal plane is inclined from a (100) plane in a <

011>

orientation;

a first buffer layer of Al_xGa<sub>1−

x</sub>As (0≦

x≦

1) provided on the principal plane of the GaAs substrate and contacting the substrate;

a second buffer layer of Al_yGa_zIn<sub>1−

y−

z</sub>P (0≦

y≦

1 and 0≦

z≦

1) provided on the first buffer layer so as to contact the first buffer layer;

a first cladding layer of Al_sGa_tIn<sub>1−

s−

t</sub>P (0≦

s≦

1 and 0≦

t≦

1) provided on the second buffer layer so as to contact the second buffer layer;

an active layer provided on the first cladding layer; and

a second cladding layer provided on the active layer, wherein

each of the first cladding layer and the second buffer layer include Al, and an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.

17. A semiconductor light emitting device, comprising:

a substrate comprising GaAs whose principal plane is inclined from a (100) plane in a <

011>

orientation;

a first buffer layer provided on the substrate;

a second buffer layer comprising Al_yGa_zIn<sub>1−

y−

z</sub>P (0≦

y≦

1 and 0≦

z≦

1) provided on the first buffer layer;

a first cladding layer comprising Al_sGa_tIn<sub>1−

s−

t</sub>P (0≦

s≦

1 and 0≦

t≦

1) provided on the second buffer layer;

an active layer provided on the first cladding layer; and

a second cladding layer provided over the active layer, wherein

each of the first cladding layer and the second buffer layer include Al, and an Al content of the first cladding layer is larger than an Al content of the second buffer layer, and wherein the second buffer layer contacts each of the first buffer layer and the first cladding layer.