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CMOS compatible single phase CCD charge transfer device

  • US 6,465,820 B1
  • Filed: 09/10/1999
  • Issued: 10/15/2002
  • Est. Priority Date: 09/16/1998
  • Status: Expired due to Term
First Claim
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1. A device formed in a substrate of a first conductivity type, the device comprising:

  • a gated region that includes a gated part and a gate electrode insulatively spaced over the gated part; and

    a photo-diode region having proximal and distal sides, the proximal side being adjacent to the gated region, the photo-diode region including first, second and third diode sub-regions, the second diode sub-region being formed of a second conductivity type in the substrate, the third diode sub-region being formed of the first conductivity type in the second diode sub-region in the proximal side, the first diode sub-region being formed of the first conductivity type in the second diode sub-region in the distal side, a first dopant species constituting a highest concentration of any dopant species in both the first and third diode sub-regions, wherein the first and third diode sub-regions contain different dopant concentrations of the first dopant species.

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