Silicon wafer including both bulk and SOI regions and method for forming same on a bulk silicon wafer

• US 6,465,852 B1
• Filed: 08/08/2000
• Issued: 10/15/2002
• Est. Priority Date: 10/20/1999
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Ju, Dong-Hyuk
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US09/633,960
• Time in Patent Office: 798 Days
• Field of Search: 257/396, 257/397, 257/401, 257/513, 257/520, 257/901
• US Class Current: 257/396
• CPC Class Codes: H01L 21/26533 of electrically inactive species in silicon to make buried insulating layers
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/66636 with source or drain recessed by etching or first recessed by etching and then refilled
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: Y10S 257/901 MOSFET substrate bias

Abstract

A silicon substrate comprises a silicon-on-insulator (SOI) portion which includes an insulating silicon dioxide layer beneath a device layer. SOI circuit structures, including SOI field effect transistors, are formed in the device layer. The substrate also comprises a bulk portion. Bulk semiconductor circuit structures are formed in wells in the bulk portion. The bulk circuit structures may be coupled to the SOI circuit structures.

Claims

1. A semiconductor device comprising:

a) a substrate having

1) a silicon-on-insulator region including an insulating layer of buried oxide at least partially separating a thin semiconductor device layer at a top surface of the substrate from a bulk silicon layer, and

2) a bulk region, wherein the bulk silicon layer extends to the top surface of the substrate; and

b) a logic circuit comprising an silicon-on-insulator circuit portion formed from silicon-on-insulator devices in the silicon-on-insulator region and a bulk circuit portion formed from bulk semiconductor structures formed in the bulk region;

wherein the silicon-on-insulator portion is operatively coupled to the bulk circuit portion.

2. The device of claim 1, further including a metal interconnect layer operatively coupling the silicon-on-insulator circuit portion to the bulk circuit portion.

3. The device of claim 2, wherein the silicon-on-insulator circuit portion includes silicon-on-insulator field effect transistors and the bulk circuit portion includes bulk field effect transistors, the silicon-on-insulator field effect transistors having a lower capacitance and faster operating speed than the bulk field effect transistors.

4. The device of claim 3, wherein the bulk field effect transistors have a larger current flow and generate more heat than the silicon-on-insulator field effect transistors.

5. The device of claim 4, wherein the bulk circuit portion includes input/output buffer circuits.

6. The device of claim 5, wherein the bulk circuit portion includes electrostatic damage protection circuits.

7. The device of claim 6, further including a plurality of connection terminals coupled to at least one of the electrostatic damage protection circuits and the input/output buffer circuits.

8. The device of claim 7, wherein the connection terminals include a plurality of controlled collapse chip connection terminals for coupling the logic circuit to at least one of a chip package and a printed circuit board.

16. The device of claim 3, wherein at least some of the silicon-on-insulator field effect transistors are operatively coupled to the bulk silicon layer through respective perforations in the insulating layer.

17. The device of claim 3, wherein at least some of the bulk field effect transistors include respective bulk wells, wherein parts of the bulk wells are further than the insulating layer from the top surface.

18. The device of claim 3, wherein at least some of the silicon-on-insulator field effect transistors are surrounded by respective insulating trenches.

9. A method of forming a silicon logic circuit comprising the steps of:

a) masking a portion of a top surface of a silicon substrate to form a masked region corresponding to a bulk circuit portion in which a bulk silicon layer of the substrate extends to the top surface of the substrate, and an unmasked region corresponding to at least part of a silicon-on-insulator circuit portion;

b) performing an oxygen implant to oxidize the silicon substrate to form an insulating layer of silicon dioxide beneath the unmasked region; and

c) forming silicon-on-insulator circuit structures in the silicon-on-insulator circuit portion and bulk circuit structures in the bulk circuit portion.

10. The method of claim 9, further including forming a metal interconnect layer coupling the silicon-on-insulator circuit structures to the bulk circuit structures.

11. The method of claim 10, wherein the step of forming silicon-on-insulator circuit structures includes forming silicon-on-insulator field effect transistors and the step of forming bulk circuit structures includes forming bulk field effect transistors.

12. The method of claim 11, wherein the step of forming bulk circuit structures includes forming input/output buffer circuits.

13. The method of claim 12, wherein the step of forming bulk circuit structures includes forming electrostatic damage protection circuits.

14. The method of claim 13, further including forming a plurality of connection terminals coupled to at least one of the electrostatic damage protection circuits and the connection terminals to the input/output buffer circuits.

15. The method of claim 14, wherein the connection terminals include a plurality of controlled collapse chip connection terminals for coupling the logic circuit to at least one of a chip package and a printed circuit board.

19. The method of claim 9, wherein the masking includes masking some of the silicon-on-insulator circuit portion with additional mask elements, and wherein the performing the oxygen implant includes forming the insulating layers with perforations corresponding to the additional mask elements.

20. The method of claim 19, wherein the forming the silicon-on-insulator circuit structures includes forming at least some of the silicon-on-insulator circuit structures operatively coupled to the bulk silicon layer via the perforations.