Compensation component and process for producing the compensation component
First Claim
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1. A compensation component, comprising:
- a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions extended along said side surfaces and said bottom surface of said trench.
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Abstract
A compensation component includes a drift path formed of p-conducting and n-conducting layers which are led around or along a trench. A process for producing the compensation component is also provided.
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Citations
11 Claims
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1. A compensation component, comprising:
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a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions extended along said side surfaces and said bottom surface of said trench. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A MOS field-effect transistor, comprising:
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a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.
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8. A junction field-effect transistor, comprising:
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a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.
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9. An IGBT, comprising:
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a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.
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10. A Schottky diode, comprising:
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a trough-shaped trench having side surfaces and a bottom surface;
two active zones; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.
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11. A compensation component, comprising:
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a semiconductor body having a trough-shaped trench formed therein, said trench having side surfaces and a bottom surface;
two active zones on said semiconductor body; and
a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions extended along said side surfaces and said bottom surface of said trench.
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Specification