Compensation component and process for producing the compensation component

• US 6,465,869 B2
• Filed: 05/30/2001
• Issued: 10/15/2002
• Est. Priority Date: 05/30/2000
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Pfirsch, Frank, Ahlers, Dirk
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US09/867,502
• Publication Number:
  US 20010048144A1
• Time in Patent Office: 503 Days
• Field of Search: 257/510-521, 257/128, 257/263, 257/332, 257/282, 257/509, 257/544, 257/548
• US Class Current: 257/548
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/66674 DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region making lateral high-voltage MISFETs with channel well and drain offset region H01L29/66659
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7801 DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region lateral high-voltage MISFETs with channel well and drain offset region H01L29/7835
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors

Abstract

A compensation component includes a drift path formed of p-conducting and n-conducting layers which are led around or along a trench. A process for producing the compensation component is also provided.

Claims

1. A compensation component, comprising:

a trough-shaped trench having side surfaces and a bottom surface;

two active zones; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions extended along said side surfaces and said bottom surface of said trench.

2. The compensation component according to claim 1, wherein said side surfaces of said trench extend from said bottom surface substantially obliquely upward, defining an opening of said trench being wider than said bottom surface.

3. The compensation component according to claim 1, including an oxide filling disposed at said trench, in addition to said n-conducting and p-conducting regions.

4. The compensation component according to claim 1, wherein said side surfaces of said trench have a wall inclination of approximately 55°

.

5. The compensation component according to claim 1, including a source zone, a body zone and a gate disposed on one side of said trench, and a drain zone disposed on another side of said trench, forming a MOS field-effect transistor.

6. The compensation component according to claim 1, including a source zone, a body zone and a gate disposed on one side of said trench, and a drain zone disposed on said bottom surface of said trench, forming a MOS field-effect transistor.

7. A MOS field-effect transistor, comprising:

a trough-shaped trench having side surfaces and a bottom surface;

two active zones; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.

8. A junction field-effect transistor, comprising:

a trough-shaped trench having side surfaces and a bottom surface;

two active zones; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.

9. An IGBT, comprising:

a trough-shaped trench having side surfaces and a bottom surface;

two active zones; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.

10. A Schottky diode, comprising:

a trough-shaped trench having side surfaces and a bottom surface;

two active zones; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions being led around said side surfaces and said bottom surface of said trench.

11. A compensation component, comprising:

a semiconductor body having a trough-shaped trench formed therein, said trench having side surfaces and a bottom surface;

two active zones on said semiconductor body; and

a drift path disposed between said two active zones, said drift path having a stacked sequence of layers of p-conducting and n-conducting regions, and said drift path with said p-conducting and n-conducting regions extended along said side surfaces and said bottom surface of said trench.