Wafer type probe card with micro tips for testing integrated circuit chips

• US 6,466,042 B1
• Filed: 11/26/1996
• Issued: 10/15/2002
• Est. Priority Date: 12/02/1995
• Status: Expired due to Fees

• Current Assignee: Jae Woo Nam
• Original Assignee: Jae Woo Nam
• Inventors: Nam, Jae Woo
• Primary Examiner(s): KARLSEN, ERNEST F
• Application Number:
  US08/731,315
• Time in Patent Office: 2,149 Days
• Field of Search: 438/14, 438/17, 438/18, 257/48, 324/762, 324/754, 324/760
• US Class Current: 324/756.03
• CPC Class Codes: G01R 1/06738 related to tip portion
• CPC Class Codes: G01R 1/06744 Microprobes, i.e. having dimensions as IC details
• CPC Class Codes: G01R 1/06761 related to layers
• CPC Class Codes: G01R 1/07342 the body of the probe being at an angle other than perpendicular to test object, e.g. probe card

Abstract

A wafer probe card for a probing test of an integrated circuit chip on a silicon wafer is disclosed. As the wafer probe card is made of a silicon wafer and manufactured by a general wafer fabrication process, the wafer probe card having a desired silicon micro tip has the same physical characteristics as that of the silicon IC chip. Accordingly, when probing test of a semiconductor IC chip by connecting the silicon micro tip to a pad, all the chips on the wafer can be tested at the same time to thereby simplify and automate the process of the probing test.

Claims

1. A wafer type probe card for testing at least one integrated circuit chip on a semiconductor wafer, the probe card comprising:

a substrate including an upper surface and a lower surface;

a cavity located in the upper surface of the substrate;

a main layer disposed on at least a portion of the upper surface of the substrate, the main layer including an extension that extends across at least a portion of the cavity and a generally uniform thickness;

a sub-layer disposed on at least a portion of the main layer and the extension, the sub-layer having a generally uniform thickness;

a micro tip formed by at least a portion of the extension of the main layer and the sub-layer, the micro tip including a distal end with an extremity that curves only outwardly and is spaced away from the upper surface of the substrate, the extremity of the distal end being sized and configured to contact a corresponding pad on an integrated circuit chip; and

means for curving the distal end of the micro tip outwardly from the upper surface of the substrate such that the extremity at the distal end is sized and configured to contact the corresponding pad on the integrated circuit chip.

2. The wafer type probe card of claim 1, wherein the means for curving the micro tip outwardly from the upper surface of the substrate includes a thermal expansion coefficient of the sub-layer that is different than a thermal expansion coefficient of the main layer.

3. The wafer type probe card of claim 1, further comprising one or more articulations disposed in the main layer, the articulations being sized and configured for controlling an angle of curvature of the micro tip.

4. The wafer type probe card of claim 3, wherein the articulations are an n+ type articulation.

5. The wafer type probe card of claim 1, wherein the main layer is an n-type epitaxial layer.

6. The wafer type probe card of claim 1, wherein the main layer has a resistivity of about 10Ω

.

7. The wafer type probe card of claim 1, wherein the main layer has a thickness of between about 2 μ

m and about 10 μ

m.

8. The wafer type probe card of claim 1, wherein the main layer is composed mainly of silicon.

9. The wafer type probe card of claim 1, wherein the main layer is composed mainly of polysilicon.

10. The wafer type probe card of claim 1, wherein the sub-layer includes a thermal oxide layer and the sub-layer includes silicon nitride and multi-layer.

11. The wafer type probe card of claim 10, further comprising a metal silicide formed on the thermal oxide layer.

12. The wafer type probe card of claim 1, wherein the sub-layer comprises a thin film.

13. The wafer type probe card of claim 1, wherein the sub-layer comprises a metal that is capable of forming a silicide.

14. The wafer type probe card of claim 1, wherein the sub-layer includes a first layer on the upper surface of the extension of the main layer and a second layer on the lower surface of the extension of the main layer.

15. The wafer type probe card of claim 3, wherein the articulations are composed mainly of phosphorous.

16. The wafer type probe card of claim 3, wherein the articulations are formed from porous silicon.