Integrated black matrix/color filter structure for TFT-LCD

• US 6,466,281 B1
• Filed: 08/23/1999
• Issued: 10/15/2002
• Est. Priority Date: 08/23/1999
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute
• Inventors: Liu, Biing Der, Chen, Jr-Hong, Huang, Tinghui
• Primary Examiner(s): Ton, Toan
• Application Number:
  US09/378,965
• Time in Patent Office: 1,149 Days
• Field of Search: 349/42, 349/114, 349/143, 349/44, 349/111, 349/110
• US Class Current: 349/44
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

An active cell for a thin-film transistor liquid crystal display, with integrated black matrix/color filter, includes a switching device, a data line, a scanning line, a planarization layer, a light shielding layer, a dielectric layer, a first electrode layer, a liquid crystal layer, a second electrode layer, and a counter plate. The switching device is formed on the substrate, wherein the data line supplies data signals to the switching device and the scanning line supplies controlling signals to the switching device. The planarization layer is formed on the switching device and has a contact opening which is extended down to a driven end of the switching device. The light shielding layer is on a portion of the planarization layer and the dielectric layer is on the light shielding layer and a top planar region of the planarization layer. The first electrode layer is formed on the dielectric layer and the planarization layer, and the first electrode layer also communicates to the driven end of the switching device through the contact opening. The liquid crystal layer is on the substrate, the second electrode layer is on the liquid crystal layer, and the counter plate on the second electrode layer.

Claims

1. An active cell for a thin-film transistor liquid crystal display on a substrate, said active cell comprising:

a switching device on said substrate;

a data line for supplying data signals to said switching device;

a scanning line for supplying controlling signals to said switching device;

a planarization layer on said switching device and said substrate, said planarization layer having a contact opening which is extended down to a driven end of said switching device;

a light shielding layer on a portion of said planarization layer;

a dielectric layer on said light shielding layer and a top planar region of said planarization layer;

a first electrode layer on said dielectric layer and said planarization layer, said first electrode communicating to said driven end of said switching device through said contact opening;

a liquid crystal layer on said substrate;

a second electrode layer on said liquid crystal layer; and

a counter plate on said second electrode layer.

2. The active cell according to claim 1, wherein said switching device comprises a transistor, said scanning line is connected to a gate of said transistor, said data line is connected to a source region of said transistor, and said driven end is connected to a drain region of said transistor.

3. The active cell according to claim 1, wherein said planarization layer comprises an organic layer.

4. The active cell according to claim 1, wherein said light shielding layer is located over said switching device, said data line and said scanning line.

5. The active cell according to claim 1, wherein said light shielding layer comprises a conductive material selected from the group consisting of chromium, molybdenum, titanium, copper-aluminum, and aluminum.

6. The active cell according to claim 1 further comprises an anti-reflectionlayer between said light shielding layer and said dielectric layer.

7. The active cell according to claim 1, wherein said first electrode layer comprises an indium-tin-oxide (ITO) electrode layer.

8. The active cell according to claim 1, wherein said second electrode layer comprises an indium-tin-oxide (ITO) electrode layer.

9. The active cell according to claim 1 further comprises a color filter lying under a portion of said planarization layer which is uncovered by said light shielding layer.

10. An active cell for a thin-film transistor liquid crystal display on a substrate, said active cell comprising:

a switching device on said substrate;

a data line for supplying data signals to said switching device;

a scanning line for supplying controlling signals to said switching device;

a planarization layer on said switching device and said substrate, said planarization layer having a contact opening which is extended down to a driven end of said switching device;

a light shielding layer on a portion of said planarization layer;

an anti-reflection layer on said light shielding layer,

a dielectric layer on said anti-reflection layer and a top planar region of said planarization layer;

a first electrode layer on said dielectric layer and said planarization layer, said first electrode communicating to said driven end of said switching device through said contact opening;

a liquid crystal layer on said substrate;

a second electrode layer on said liquid crystal layer;

a counter plate on said second electrode layer; and

a bias generator electrically coupled between said light shielding layer of a conductive material and said second electrode layer, in order to provide a bias voltage between said light shielding layer and said second electrode layer.

11. The active cell according to claim 10, wherein said switching device comprises a transistor, said scanning line is connected to a gate of said transistor, said data line is connected to a source region of said transistor, and said driven end is connected to a drain region of said transistor.

12. The active cell according to claim 10, wherein said planarization layer comprises an organic layer.

13. The active cell according to claim 10, wherein said light shielding layer is located over said switching device, said data line and said scanning line.

14. The active cell according to claim 10, wherein said light shielding layer comprises a conductive material selected from the group consisting of chromium, molybdenum, titanium, copper-aluminum, and aluminum.

15. The active cell according to claim 10, wherein said first electrode layer comprises an indium-tin-oxide (ITO) electrode layer.

16. The active cell according to claim 10, wherein said second electrode layer comprises an indium-tin-oxide (ITO) electrode layer.

17. The active cell according to claim 10 further comprises a color filter lying under a portion of said planarization layer which is uncovered by said light shielding layer.